| PART |
Description |
Maker |
| IRF7460 IRF7460TR IRF7460TRPBF |
12 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
Power MOSFET(Vdss=20V/ Id=12A)
Power MOSFET(Vdss=20V, Id=12A)
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
|
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRL5NJ7404 2281 |
-20V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
HEXFET? POWER MOSFET
From old datasheet system
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5) 20V, P-CHANNEL
|
IRF[International Rectifier]
|
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| IRLR3714PBF IRLU3714PBF IRLR3714TRRPBF IRLR3714TRP |
High Frequency Isolated DC-DC
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mヘ , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20m楼? , ID = 36A )
HEXFET Power MOSFET ( VDSS = 20V , RDS(on)max = 20mΩ , ID = 36A )
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
30 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
International Rectifier
|
| PT7A7515 PT7A7513 PT7A7535 PT7A7531 |
MOSFET; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:67A; On-Resistance, Rds(on):7.9mohm; Rds(on) Test Voltage, Vgs:10V; Leaded Process Compatible:No; Package/Case:D2PAK; Peak Reflow Compatible (260 C):No RoHS Compliant: No
3.08V Reset Active Low Supervisor
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| STN5PF02V |
P-channel 20V - 0.065 - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET
P-channel 20V - 0.065з - 4.2A - SOT-223 2.5V - Drive STripFET⑩ II Power MOSFET
P-channel 20V - 0.065蟹 - 4.2A - SOT-223 2.5V - Drive STripFET??II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRL3714Z IRL3714ZL IRL3714ZS |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
IR
|
| FDFMA2P85708 FDFMA2P857 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ
|
Fairchild Semiconductor
|
| WNM2016 WNM2016-3TR |
N-Channel Power MOSFET
N-Channel, 20V, 3.2A, Power MOSFET Excellent ON resistance for higher DC current
|
TY Semiconductor Co., Ltd
|
