| PART |
Description |
Maker |
| SIGC156T120R2CS |
IGBTs - HV Chips - SIGC156T120R2CS, 1200V, 100A
|
Infineon
|
| SIGC81T120R2CL |
IGBTs - HV Chips - SIGC81T120R2CL, 1200V, 50A
|
Infineon
|
| SIGC15T60UN |
IGBTs - HV Chips - SIGC15T60UN, 600V, 15A
|
Infineon
|
| HGTD6N40E1 HGTD6N50E1S HGTD6N40E1S HGTD6N50E1 |
6A/ 400V and 500V N-Channel IGBTs
6A 400V and 500V N-Channel IGBTs
6A, 400V and 500V N-Channel IGBTs 7.5 A, 500 V, N-CHANNEL IGBT, TO-252AA
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| BM-10EG88ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-20EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-20EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-41EG57MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| BM-20EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
