| PART |
Description |
Maker |
| STR8062 |
High Blocking Voltage (600V)
|
Solid State Optronic
|
| BT139-60DG BT139-600E BT139-600E11 |
4Q Triac High blocking voltage capability
|
NXP Semiconductors
|
| JME175-18 |
Chip - double mesa SCRs of reverse blocking high-voltage
|
JIEJIE MICROELECTRONICS...
|
| A29040AV-90 A29040A-70 A29040A-90 A29040AV-55 A290 |
AUTOMATIC 600A CLAMPMETER WITH AUTOTECT RoHS Compliant: NA
512K X 8 Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Test RoHS Compliant: NA
Fuse; Current Rating:1A; Voltage Rating:600V; Voltage Rating:600V; Voltage, AC:600V RoHS Compliant: NA 512k × 8位CMOS 5.0伏只，统一部门快闪记忆
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| SGSD310 SGSD311 SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor
|
SGS Thomson Microelectronics
STMicroelectronics
|
| D3041N |
High DC blocking stability
|
Infineon Technologies A...
|
| M81721FP |
600V HIGH VOLTAGE HALF BRIDGE DRIVER
|
Mitsubishi Electric Semiconductor
|
| SCM1246MF SCM1200MF SCM1242MF SCM1256MF SCM1265MF |
500V / 600V High Voltage Three-phase Motor Driver ICs
|
Sanken electric
|
| NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A.
Silicon Controlled Rectifiers
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
| CCR28H-10 CCR28H-20 CCR34H-10 CCR34H-20 CCR CCR58H |
Rectifier Die, Glass Passivated Junction Protection for Superior Blocking Voltage and Stability
|
Cynergy3 Co
|
| LD20 LD40 LD10 LD13 LD12 LD06 LD08 |
High Voltage MLC Chips Tin/Lead Termination “B For 600V to 5000V Applications
High Voltage MLC Chips Tin/Lead Termination “B?For 600V to 5000V Applications
|
AVX Corporation
|
| C230 C233 C231 C232 C231B3 |
Silicon controlled rectifier. Reverse blocking triode thyristor. 25 A RMS. Repetitive peak off-state voltage 200 V.
|
MOTOROLA[Motorola, Inc]
|
