| PART |
Description |
Maker |
| BAT15-02L BAT15-02V BAT15-04W BAT15-05W BAT15 BAT1 |
Schottky Diodes - Silicon RF Schottky diode for DBS mixer applications up to 12 GHz
RESISTOR,SMD1206,1K,1/4W,5%
Silicon Schottky Diodes 硅肖特基二极
|
INFINEON[Infineon Technologies AG]
|
| HSCH-5314 HSCH-5300 HSCH-5310 HSCH-5312 HSCH-5315 |
Beam Lead Silicon Schottky Diodes 梁铅硅肖特基二极
Beam Lead Schottky Diodes for Mixers and Detectors (1-26 GHz)(1-26 GHz粱式引线肖特基二极管（用于混频器和检测器
BeamLeadSiliconSchottkyDiodes
Beam Lead Schottky Diodes for Mixers and Detectors (1 - 26 GHz)
|
Avago Technologies, Ltd.
HP[Agilent(Hewlett-Packard)]
|
| BAT63 Q62702-A1004 |
From old datasheet system
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) 硅肖特基二极管（低的混频器和探测器高达千兆赫的频率垒二极管）
|
Siemens Semiconductor G...
Siemens Semiconductor Group
Infineon
SIEMENS AG
|
| BAT15-013 BAT15-013S BAT15-033 BAT15-034 BAT15-043 |
From old datasheet system
Silicon Schottky Diodes (Low barrier diodes For mixer applications Hermetically sealed ceramic packages For frequencies up to 40 GHz)
330MHz Buffered Video Switches Crosspoint Building Blocks
Single/Dual/Quad, Wide-Bandwidth, Low-Power, Single-Supply Rail-to-Rail I/O Op Amps
500MHz, Low-Power Op Amps
BBG LO PWR MULT MOD H FRE; Package: SOIC-8 Narrow Body; No of Pins: 8; Container: Tape and Reel; Qty per Container: 2500
400MHz, Ultra-Low-Distortion Op Amps
250MHz, Broadcast-Quality, Low-Power Video Op Amps
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) 伊雷尔硅肖特基二极管（伊雷尔分立半导体和微波探测器和培养基的应用垒二极管混频器）
350MHz, Ultra-Low-Noise Op Amps SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
Single/Dual/Quad, 400MHz, Low-Power, Current Feedback Amplifiers SILICON, MEDIUM BARRIER SCHOTTKY, MIXER DIODE
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
SIEMENS A G
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BAT64-02V BAT64-02W BAT64-05 BAT64 BAT64-07 BAT64- |
Schottky Diodes - Silicon AF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| ML4641-186 ML4962-275 ML4962-138 ML4520-30 ML4520- |
300 V, SILICON, PIN DIODE
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE
KA BAND, 5.5 pF, 30 V, GALLIUM ARSENIDE, ABRUPT VARIABLE CAPACITANCE DIODE
150 V, SILICON, PIN DIODE
27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
| 2086SERIES 2086-6000-00 2086-6010-00 |
Biased & Zero Biased Schottky Detectors
Biased&ZeroBiasedSchottkyDetectors
Biased & Zero Biased Schottky Detectors
1-15 GHz, biased and zero biased schottky detector
1-18 GHz, biased and zero biased schottky detector
|
Tyco Electronics
TycoElectronics
MA-Com
|
| TSDF1920W |
25-GHz NPN RF transistors
very high power gain;
Very low-noise;
25 GHz Silicon NPN Planar RF Transistor
|
Vishay Intertechnology,Inc.
Vishay Siliconix
|
| DSSK48-0025B |
Power Schottky Rectifier with common cathode
25 A, 25 V, SILICON, RECTIFIER DIODE, TO-220AB PLASTIC PACKAGE-3
Silicon Schottky Diodes
|
IXYS Corporation
IXYS, Corp.
|
| DSSK30-0045B |
Power Schottky Rectifier with common cathode 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
