| PART |
Description |
Maker |
| BZT52C10 BZT52C10-7 BZT52C11 BZT52C11-7 BZT52C12 B |
SURFACE MOUNT ZENER DIODE
Low Current Operation at 250 锛?ow Reverse Leakage,Low Noise Zener Diode
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 2.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 7.5 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Dual Negative-Edge-Triggered J-K Flip-Flop With Clear And Preset 16-TSSOP -40 to 85 12 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 36 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 20 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 4.7 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
|
Diodes, Inc.
Diodes Inc.
DIODES[Diodes Incorporated]
|
| MBM29DL161BE MBM29DL161TE MBM29DL161BE-70 MBM29DL1 |
16M (2MX8/1MX16) BIT Dual Operation
FLASH MEMORY 16M (2M x 8/1M x 16) BIT Dual Operation
Flash memory CMOS 16M (2M x 8/1 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| MBM29DL161TE-70 MBM29DL161TE-90 MBM29DL162TE-90 MB |
16M (2MX8/1MX16) BIT Dual Operation
1M X 16 FLASH 3V PROM, 12 ns, PDSO48
TVS BIDIRECT 600W 48V SMB 16米（2米x 8/1M × 16）位双操
8 PORT MODULAR SWITCH
4 PORT 100MB MULTI-MODE FIBER
BANDWIDTH MANAGER MODULE TP
16M (2M X 8/1M X 16) BIT Dual Operation
|
Fujitsu Component Limited.
Fujitsu, Ltd.
Fujitsu Limited
|
| 135D128X0006K2 135D128X0006T2 135D188X0006K2 135D2 |
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55C to 200C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC00ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation 钽案例与玻璃对钽密封密封的，55ΣC200ΣC行动
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
|
Vishay Intertechnology,Inc.
Vishay Intertechnology, Inc.
|
| 031-0531-300 031-0211-300 031-0212-300 031-0511-30 |
FOR MOUNTING IN 1 CLEARANCE HOLE FOR 2 TO 120V OPERATION
FOR MOUNTNG IN 1 CLEARANCE HOLE FOR 2 TO 120V OPERATION
FOR MOUNTNG N 1 CLEARANCE HOLE FOR 2 TO 120V OPERATION
|
Dialight Corporation
|
| NJU8710 NJU8710R |
2V Operation Clock-less Switching Driver for Class Amplifier
From old datasheet system
2V Operation Clock-less Switching Driver for Class D Amplifier 2V的运行时钟减少开关D类放大器驱动
|
New Japan Radio Co., Ltd.
|
| SMHF2815D SMHF2805S SMHF2812S SMHF283R3S SMHF2812D |
Fully qualified to Class H or K -55掳C to 125掳C operation 16 to 40 VDC input
Fully qualified to Class H or K -55°C to 125°C operation 16 to 40 VDC input
|
Interpoint Corporation Company
Interpoint Corporation ...
|
| AM29DL400BT-120FC AM29DL400BT-80FCB AM29DL400BT-90 |
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 120 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 4兆位12亩x 8-Bit/256亩x 16位）.0伏的CMOS只，同时作业快闪记忆
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 70 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 80 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO44
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 256K X 16 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 90 ns, PDSO48
4 Megabit (512 K x 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 8 FLASH 3V PROM, 120 ns, PDSO44
|
http://
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
|
| AM49PDL640AG70N AM49PDL640AG70NT AM49PDL640AGA70NS |
Simultaneous Operation Flash Memory And 16Mbit (1M X16-Bit) Pseudo Static RAM
64 Megabit (4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Pseudo Static RAM
|
AMD
SPANSION[SPANSION]
|
| XA3SD1800A XA3SD3400A DS705 |
XA Spartan-3A DSP Automotive FPGA Family Data Sheet
Integrated adder for complex multiply or multiply-add operation
Integrated adder for complex multiply or multiply-add operation
|
Xilinx, Inc
|
| A3144EU A3143 A3143-LT A3143-U A3143-UA A3142ELTNB |
SENSITIVE HALL-EFFECT SWITCHES FOR HIGH-TEMPERATURE OPERATION
Sensitive hall-effect switche for high-temperature operation
|
ALLEGRO[Allegro MicroSystems]
|
| TFDU6101E TFDU6101E-TR4 TFDU6101E-TT4 TFDS6401 TFD |
Infrared transceivers
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation 快速红外收发器模块系列兆飞行情报区/秒）2.6 V.5 V工作电压
Fast Infrared Transceiver Module Family (FIR, 4 Mbit/s) for 2.6 V to 5.5 V Operation 快速红外收发器模块系列4兆飞行情报区/秒）2.6 V.5 V工作电压
Fast Infrared Transceiver Module Family (FIR/ 4 Mbit/s) for 2.6 V to 5.5 V Operation
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
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