| PART |
Description |
Maker |
| ZHMA2901 ZHMA2911 |
Diode Array Diode Array; Case Size: 19x9 mm; Packaging: Bulk 0.1 A, 40 V, 6 ELEMENT, SILICON, SIGNAL DIODE
Diode Array Diode Array 0.1 A, 40 V, 8 ELEMENT, SILICON, SIGNAL DIODE
|
Bourns, Inc.
Nichicon, Corp.
|
| BAR66 |
PIN Diodes - PIN Diode array; Surge protection device
Silicon PIN Diode Array
|
INFINEON[Infineon Technologies AG]
|
| SR12 SR12.TC SR12.TCT |
RailClamp? Low Capacitance TVS Diode Array
RailClamp庐 Low Capacitance TVS Diode Array
RailClamp㈢ Low Capacitance TVS Diode Array
|
http://
Semtech Corporation
|
| SRDA70-4.T SRDA70-4.TB SRDA70-4.TBT SRDA70-406 SRD |
RailClamp? Low Capacitance TVS Diode Array
RailClamp庐 Low Capacitance TVS Diode Array
RailClamp㈢ Low Capacitance TVS Diode Array
|
Semtech Corporation
|
| HSMS286L-BLK HSMS286L-TR1 HSMS286P-BLK HSMS286P-TR |
ARRAY OF INDEPENDENT DIODES|TSOP
BRIDGE/RING DIODE ARRAY|TSOP 环二极管阵列|的TSOP
|
Avago Technologies, Ltd.
|
| DI914-2Q DI914-2QM DI914-1B DI914-2B DI914-3B DI91 |
BRIDGE/RING DIODE ARRAY|CHIP
ARRAY OF INDEPENDENT DIODES|CHIP 独立二极管阵列|芯片
|
Avago Technologies, Ltd.
Diodes, Inc.
|
| M63823FP M63823GP M63823P M63823P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MXP1144 |
Solar Array Diode
Photovoltaic By-Pass Diode 50 Volts, 1.0 Amps
|
MICROSEMI[Microsemi Corporation]
|
| NSDEMP11XV6T5 NSDEMP11XV6T5G NSDEMP11XV6T1 NSDEMP1 |
Common Anode Quad Array Switching Diode 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE
|
ONSEMI[ON Semiconductor]
|
| MMBD4448HCDW-7-F MMBD4448HSDW-7-F |
SURFACE MOUNT FAST SWITCHING DIODE ARRAY 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE
|
Diodes, Inc.
|
| SP724AHT |
TVS Diode Arrays - SCR Diode Array for ESD and Transient Overvoltage Protection
|
Littelfuse
|
