| PART |
Description |
Maker |
| IXFN62N80Q3 |
HiperFETTM Power MOSFET Q3-Class
|
IXYS Corporation
|
| IXFT7N90Q IXFH7N90Q |
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFH26N60Q IXFT26N60Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q-Class
|
IXYS[IXYS Corporation]
|
| IXFH12N100Q IXFT12N100Q IXFH10N100Q |
Discrete MOSFETs: HiPerFET Power MOSFETS
HiPerFETTM Power MOSFETs Q Class
|
IXYS Corporation
|
| IXFN27N80 IXFK25N80 |
(IXFx2xN80) HiPerFETTM Power MOSFETs
|
IXYS Corporation
|
| IXFN34N80 |
HiPerFETTM Power MOSFETs Single DieMOSFET
|
IXYS[IXYS Corporation]
|
| IXFR21N100Q |
HiPerFETTM Power MOSFETs ISOPLUS247TM (Electrically Isolated Back Surface)
|
IXYS Corporation
|
| VBH40-05B IXYSCORP-VBH40-05B |
Module with HiPerFETTM H-Bridge and Single Phase Mains Rectifier Bridge
MOSFET Modules
|
IXYS[IXYS Corporation]
|
| MRF1000MB MRF1000MB-15 |
Class A, Class AB Microwave Power Silicon NPN Transistor 0.7 W, 960-1215 MHz, 18V
|
M/A-COM Technology Solutions, Inc.
M/A-COM Technology Solu...
|
| MRF6S20010N MRF6S20010NR1 MRF6S20010GNR1 |
RF Power Field Effect Transistors
The MRF6S20010NR1 and MRF6S20010GNR1 are designed for Class A or Class AB general purpose applications
|
Freescale Semiconductor, Inc
MOTOROLA
|
| CA14323 |
IESNA Type ll (medium) beam, applicable for European P-class standard pedestrian lighting and M-class roads
|
Ledil, Inc.
|
| C15034 |
IESNA Type II (medium) beam applicable for European P-class standard pedestrian lighting and M-class roads
|
Ledil, Inc.
|
