| PART |
Description |
Maker |
| RP114N151D-TR-FE RP114K361B-TR RP114N081D-TR-FE RP |
Supply Current Typ. 50uA
|
RICOH electronics devic...
|
| RP101K332B-TR |
Supply Current Typ. 18uA
|
RICOH electronics devic...
|
| S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V
NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption
MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
|
Hamamatsu Photonics
|
| S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
|
Hamamatsu Photonics
|
| S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
| S7686 |
MOSFET, Switching; VDSS (V): -60; ID (A): -5; Pch : 20; RDS (ON) typ. (ohm) @10V: 0.14; RDS (ON) typ. (ohm) @4V[4.5V]: 0.2; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 10.8; Package: DPAK (L)- (2)
|
Hamamatsu Photonics
|
| RP201N301D-TR-FE RP201K121B-TR RP201N121D-TR-FE RP |
Supply Current (Low power Mode) Typ. 1.0uA (VOUT<1.85V)
|
RICOH electronics devic...
|
| R5326Z040-E2-F |
Supply Current (Low Power Mode) Typ. 5.5μA×2 (VR1&VR2) (IOUT=0mA)
|
RICOH electronics devic...
|
| RN5RF-17 RE5RF35A-TR-FE |
Supply Current Typ. 30uA
|
RICOH electronics devic...
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| TX10005JASLPLNH TX1000 TX10005BASLPLNH TX10005CASL |
1000 Watt. AC/DC power supply. Output voltage 2.5V, output current 200A
1000 Watt. AC/DC power supply. Output voltage 18.0V, output current 56A
1000 Watt. AC/DC power supply. Output voltage 24.0V, output current 42A
1000 Watt. AC/DC power supply. Output voltage 28.0V, output current 36A
1000 Watt. AC/DC power supply. Output voltage 3.3V, output current 182A
1000 Watt. AC/DC power supply. Output voltage 15.0V, output current 67A
1000 Watt. AC/DC power supply. Output voltage 48.0V, output current 21A
1000 Watt. AC/DC power supply. Output voltage 36.0V, output current 28A
1000 WATT AC/DC POWER SUPPLY
1000 Watt. AC/DC power supply. Output voltage 20.0V, output current 50A
|
CANDD[C&D Technologies]
|
| SGM6605 SGM6605-5.0YN6G/TR SGM6605-ADJYN6G/TR |
Device Quiescent Current: 30μA (TYP)
|
SG Micro Corp
|
