PART |
Description |
Maker |
KM110B KM110B_2 KM110B/2 |
Magnetic field sensor MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -2.75-2.75mT, RECTANGULAR, THROUGH HOLE MOUNT
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
XC4000XLA-SERIES XC4000XV-SERIES XC40110XV-08HQ240 |
Field Programmable Gate Arrays Field programmable gate arrays. VCCINT = 2.3V to 2.7V and VCCIO = 3.3 to 3.6V . Field programmable gate arrays. Vcc = 3.0V to 3.6V.
|
Xilinx
|
ZPSD501B1-C-15J ZPSD501B1-C-15L ZPSD501B1-C-15U ZP |
PSD5XX/ZPSD5XX FAMILY FIELD-PROGRAMMABLE MICROCONTROLLER PERIPHERALS Low Cost Field Programmable Microcontroller Peripherals
|
STMICROELECTRONICS[STMicroelectronics]
|
MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
|
Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
|
NDP6020P NDB6020P |
P-Channel Enhancement Mode Field Effect Transistor24A,-20V0.05ΩP沟道增强型MOS场效应管(漏电流-24A, 漏源电压-20V,导通电0.05Ω 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB P-Channel Logic Level Enhancement Mode Field Effect Transistor
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor] http://
|
RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers ETC[ETC]
|
TMC2000 TMC3000NF |
MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.2-0.2mT, 1V, SQUARE, SURFACE MOUNT MAGNETIC FIELD SENSOR-MAGNETORESISTIVE, -.06-0.06mT, 1V, RECTANGULAR, THROUGH HOLE MOUNT
|
NEC TOKIN CORP
|
AL422 AL422B AL422V3 AL422V5 |
AL422 3M-Bits FIFO Field Memory AL422 3M-Bits FIFO Field Memory Single-Phase High Efficiency DC/DC Controller with On-Chip Gate Drivers for Intel Mobile CPUs
|
List of Unclassifed Manufacturers
|
FGH15T120SMD |
1200V, 15A, Field Stop Trench IGBT 1200 V, 15 A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
MMBF2202PT1_D ON2097 MMBF2201PT1 MMBF2202PT3 MMBF2 |
Small-signal MOSFET TMOS single P-channel field effect transistor Motorola Preferred Device From old datasheet system LOW RDS SMALL SIGNAL MOSFETS TMOS SINGLE P CHANNEL FIELD EFFECT TRANSISTORS
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
SSM3J09FU |
Field Effect Transistor Silicon P Channel MOS Type Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|