| PART |
Description |
Maker |
| BCR15PN |
Dual Built-in Resistor AF Transistors; NPN/PNP; Industrial Standars Types, Icmax of 100mA; Vceo of 50V
NPN/PNP Silicon Digital Transistor Array
|
INFINEON[Infineon Technologies AG]
|
| BCR19PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
Infineon
|
| BCR48 BCR48PN |
Digital Transistors - SOT363 package
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies AG
|
| FXT3866SM FXT449SM FXT549SM FXT749SM FXT649SM FXT6 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | SOT-89
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 2A I(C) | SO
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 500MA I(C) | SO
TRANSISTOR | BJT | NPN | 150V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管| npn型| 150伏五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 2A I(C) | SO 晶体管|晶体管|进步党| 100V的五（巴西）总裁|甲一（c）|
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 1A I(C) | SOT-89 晶体管|晶体管|进步党| 60V的五（巴西）总裁| 1A条一（c）|采用SOT - 89
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 1A I(C) | SO 晶体管|晶体管|叩| 45V的五（巴西）总裁| 1A条一（c）|
TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 400MA I(C) | SO 晶体管|晶体管|叩| 30V的五（巴西）总裁| 400mA的一（c）|
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | SOT-89
|
Zetex Semiconductor PLC
Fujitsu, Ltd.
Bourns, Inc.
Amphenol, Corp.
|
| SLA4340 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 4 A, 60 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
PNP NPN Darlington H-bridge
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
|
| UMF5NTR |
PNP Low VCE(sat) Transistor NPN Digital transistor
|
ROHM
|
| UMC2N FMC2A |
PNP and NPN digital transistor
|
TY Semiconductor Co., Ltd
|
| BCR48PN-11 |
NPN/PNP Silicon Digital Transistor Array
|
Infineon Technologies A...
|
| 2SD414 2SD415 2SB548 2SB549 2SD414Q 2SD414Q-AZ |
800 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
PNP/NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS
(2SB548) PNP/NPN Silicon Epitaxial Transistor
|
NEC[NEC]
|
