PART |
Description |
Maker |
HM5425801B |
256M SSTL_2 interface DDR SDRAM(256M SSTL_2接口 DDR 同步DRAM) 256M DDR SDRAM的接口SSTL_256M SSTL_2接口的DDR同步DRAM)的
|
Hitachi,Ltd.
|
K9K2G0816QU0M |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Data Sheet
|
Samsung Electronic
|
K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G1 |
512M x 8 Bit / 256M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
EM6GE16EWXC EM6GE16EWXC-12H |
256M x 16 bit DDR3 Synchronous DRAM
|
EtronTech
|
HYB18RL25616AC-4 HYB18RL25616AC-5 HYB18RL25632AC-5 |
16M X 16 DDR DRAM, PBGA144 Specialty DRAMs - 256M (8Mx32) 200MHz Specialty DRAMs - 256M (16Mx16) 200MHz Specialty DRAMs - 256M (16Mx16) 250MHz
|
INFINEON TECHNOLOGIES AG
|
MX25L25735E MX25L25735EMI12G MX25L25735EZNI12G |
256M-BIT [x 1/x 2/x 4] CMOS MXSMIOTM (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
W29GL256SH9C W29GL256SL9B W29GL256SL9C W29GL256SH9 |
256M-BIT 3.0-VOLT PARALLEL FLASH MEMORY WITH PAGE MODE
|
Winbond
|
MC-4R256FKE8S-845 MC-4R256FKE8S |
Direct Rambus DRAM SO-RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HN29V25611ANBSP HN29V25611A HN29V25611AT-50 |
256M AND type Flash Memory More than 16,057-sector (271,299,072-bit)
|
Renesas Electronics Corporation
|
MC-4R256FKE8D-845 MC-4R256FKE8D MC-4R256FKE8D-653 |
190730050 Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 18-BIT)
|
Elpida Memory, Inc. ELPIDA[Elpida Memory]
|
HM52Y25405B-B6 HM52Y25405BTT-B6 HM52Y25165B-B6 HM5 |
256M SDRAM 100 MHz 4-Mword × 16-bit × 4-bank /16-Mword × 4-bit × 4-bank 256M SDRAM 100 MHz 4-Mword 隆驴 16-bit 隆驴 4-bank /16-Mword 隆驴 4-bit 隆驴 4-bank
|
Elpida Memory
|
EDS2532AABJ-75-E EDS2532AABJ-75L-E |
256M bits SDRAM (8M words 32 bits) 8M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90 256M bits SDRAM (8M words 32 bits) 256M位的SDRAM00万字32位) 256M bits SDRAM (8M words ?32 bits)
|
Elpida Memory, Inc. ELPIDA MEMORY INC
|