| PART |
Description |
Maker |
| BSP317Q67000-S94 |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
|
EM Microelectronic
|
| PHT8N06LTT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
NXP Semiconductors N.V.
|
| ZVP2106G ZVP2106GTA |
TRANSISTOR MOSFET SMD SOT 223 晶体管MOSFET的贴片采用SOT 223
SOT223 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
|
Diodes, Inc.
Diodes Incorporated
http://
|
| BFG94T/R |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 60MA I(C) | SOT-223 晶体管|晶体管|叩| 12V的五（巴西）总裁| 60mA的一c）|的SOT - 223
|
DB Lectro, Inc.
|
| BCP53-16T3 BCP53-10T3 BCP53-16T1 BCP53-10T1 |
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | SOT-223 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|的SOT - 223
|
NXP Semiconductors N.V.
|
| FQT5N20 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 1A条（丁）|的SOT - 223
200V N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
| STN1HNC60 |
N-CHANNEL 600V 7 OHM 0.4A SOT-223 POWERMESH II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh?II MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMeshII MOSFET
N-CHANNEL 600V - 7ohm - 0.4A - SOT-223 PowerMesh⑩II MOSFET N沟道600V 7ohm - 0.4A - SOT - 223封装MOSFET的第二PowerMesh
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| STN3NF06 |
N-CHANNEL 60V - 0.07 OHM - 4A SOT-223 STRIPFET II POWER MOSFET
N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET⑩ II POWER MOSFET
N-CHANNEL 60V - 0.07ohm - 4A SOT-223 STripFET II POWER MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| Z0110NA/2AL2 Z0110NN/2AL2 Z0107MA/1AA2 Z0109MA/1AA |
TRIAC|800V V(DRM)|1A I(T)RMS|TO-92
MEMORY 16MBYTES 3 VOLT STRATAFLASH 56-LEAD TSOP
256MB SDRAM SODIMM
IC APEX 20KE FPGA 200K 484-FBGA
IC, ISP EPM7192SQC160-7
IC MAX 7000 CPLD 32 44-PLCC
FPGA Logic IC; Logic Type:Programmable; No. of Macrocells:102; Package/Case:144-TQFP; Leaded Process Compatible:No; Number of Circuits:1728; Peak Reflow Compatible (260 C):No; Mounting Type:surface mount RoHS Compliant: No
CPLD Logic IC; Logic Type:Programmable; No. of Macrocells:64; Package/Case:68-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No
8Mb Boot Block Flash
TRIAC|700V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
Programmable Logic IC; Logic Type:Programmable; Package/Case:84-PLCC; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Mounting Type:Surface Mount RoHS Compliant: No 可控硅| 800V的五（DRM）的| 1A条口T）的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|TO-92 可控硅| 600V的五（DRM）的| 1A条口T）的有效值|92
TRIAC|700V V(DRM)|1A I(T)RMS|TO-92 可控硅| 700V的五（DRM）的| 1A条口（T）的有效值|2
TRIAC|600V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 600V的五（DRM）的| 1A条口（T）的有效值|采用SOT - 223
TRIAC|800V V(DRM)|1A I(T)RMS|SOT-223 可控硅| 800V的五（DRM）的| 1A条口T）的有效值|采用SOT - 223
|
Electronic Theatre Controls, Inc.
NXP Semiconductors N.V.
OMRON Scientific Technologies, Inc.
Supertex, Inc.
TE Connectivity, Ltd.
Omron Electronics, LLC
|
| BB-223-02XT 0190700066 |
RING INSULKRIMP TAPED (BB-223-02XT)
|
Molex Electronics Ltd.
|
