| PART |
Description |
Maker |
| UPD4265800LE-A80 UPD4264800LE-A80 UPD4265800LE-A70 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
64K x 16 Static RAM
1K x 8 Dual-Port Static RAM
1-Mbit (64K x 16) Static RAM x8快速页面模式的DRAM
|
STMicroelectronics N.V.
|
| CYK001M16ZCCAU-70BAI CYK001M16ZCCA CYK001M16ZCCAU- |
1M X 16 PSEUDO STATIC RAM, 55 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1.20 MM HEIGHT, FBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
CAP 1000PF 1000V 5% NP0(C0G) SMD-1812 TR-7 PLATED-NI/SN 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
CYPRESS[Cypress Semiconductor]
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IDT71V428YS10YYYG IDT71V428YS10YYYGI IDT71V428S10Y |
3.3V CMOS Static RAM 4 Meg (1M x 4-Bit)
3.3V 1M x 4 Static RAM Center Pwr & Gnd Pinout
|
Integrated Device Techn...
IDT[Integrated Device Technology]
|
| IS61C512 IS61C512-15J IS61C512-15JI IS61C512-15NI |
ASYNCHRONOUS STATIC RAM
64K X 8 HIGH-SPEED CMOS STATIC RAM
|
ICSI[Integrated Circuit Solution Inc]
|
| IDT71T016SA 71T016SA_DS_22694 IDT71T016 |
2.5V 64K x 16 Static RAM
From old datasheet system
2.5V CMOS Static RAM
|
IDT
|
| IC62C1024 IC62C1024-35TI IC62C1024-35W IC62C1024-3 |
128K X 8 HIGH SPEED CMOS STATIC RAM
128K X 8 HIGH SPEED CMOS STATIC RAM 128K的乘八高速CMOS静态RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM, Low Speed A.SRAM
55ns; 5V; 128K x 8 high-speed CMOS static RAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| C0603C102K2RECAUTO |
Ceramic, Electro Static Discharge, ESD-AUTO, 1000 pF, 10%, 200 V, 0603, X7R, SMD, MLCC, Temperature Stable, Electro Static Discharge, Automotive Grade
|
Kemet Corporation
|
| IS61LV12824 21_61LV12824 IS61LV12824-9B |
9ns; 3.3V; 128K x 24 high-speed CMOS CMOS static RAM
From old datasheet system
ASYNCHRONOUS STATIC RAM
|
ICSI
|
| CY7C185A 7C185A CY7C185A-20DMB |
8Kx8 Static RAM
From old datasheet system
8K x 8 Static RAM
|
Cypress
|
| IS61C3216 IS61C3216NBSP IS61C3216-20TI IS61C3216-1 |
32K x 16 HIGH-SPEED CMOS STATIC RAM 32K的16 HIGH-SPEED的CMOS静态RAM
ASYNCHRONOUS STATIC RAM
|
Integrated Silicon Solution, Inc.
ICSI[Integrated Circuit Solution Inc]
|
