| PART |
Description |
Maker |
| C62122-A132-B95 B84115-E-A110 B84115-E-A30 B84115- |
SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A
|
EPCOS AG
EPCOS[EPCOS]
|
| BSS806N |
OptiMOS2 Small-Signal-Transistor Ultra Logic level (1.8V rated) Avalanche rated
|
TY Semiconductor Co., Ltd
|
| 951CXP825K-SF-F |
AC Rated, Round Axial Leaded, UL 810 Fail Safe, Rated 10,000 AFCLMax.
|
Cornell Dubilier Electr...
|
| 953BQW7KSF-F 953BQW7P5KSF-F 953BIW17P5KSF-F |
AC Rated, Radial Leaded Box, UL 810 Fail Safe, Rated 10,000 AFC
|
Cornell Dubilier Electr...
|
| B82476-A1684-M B82476-A1103-M B82476-A1104-M B8247 |
INDUCTOR 100UH 1200MA
Rated inductance 10 to 1000 mH Rated current 300 to 3800 mA
|
EPCOS[EPCOS]
|
| B82432-T |
Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 mH Rated current 60 to 1300 mA
|
EPCOS[EPCOS]
|
| B82422-A1102-100 B82422-A1103-100 B82422-A1104-100 |
Size 1210 (EIA) or 3225 (IEC) Rated inductance 0,0082 to 100 uH Rated current 65 to 800 mA
|
EPCOS AG
EPCOS[EPCOS]
|
| B84115-E-A60 B84115-E-K60 B84115-E-A110 B84115-E-A |
SIFI-E for high insertion loss Rated voltage 250 V~, 50/60 Hz Rated current 3 A to 10 A 推出SIFI -高插入额定电50失去位置0/60赫兹额定电流3 A0
|
EPCOS AG
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| Q67040-S4005-A2 BUZ110S |
High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| IRFF310 2476 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-205AF)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-205AF)
From old datasheet system
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-205AF)
|
IRF[International Rectifier]
|
