| PART |
Description |
Maker |
| 600-052 |
600-052, 600-090, 600-057, 600-083,600-052-1, 600-090-1, 600-057-1 & 600-083-1 Clamping Bands
|
Glenair, Inc.
|
| P6KE39A P6KE9.1CA P6KE51CA P6KE300A P6KE300CA P6KE |
16-Bit Bus Transceivers and Registers with 3-State Outputs 56-SSOP -40 to 85 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
RF Down-Converter 20-QFN 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
Presettable Synchronous 4-Bit Up/Down Binary Counters 16-SOIC -40 to 85 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
2.5-V 460-Kbps RS-232 Transceiver With /-15-kV ESD Protection 20-TSSOP 0 to 70
600 Watt Transient Voltage Suppressors
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Microsemi
|
| PM600DV1A060 |
Single Phase IGBT Inverter Output 600 Amperes/600 Volts
|
Powerex Power Semiconductors
|
| CM75DY-12H |
Dual IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
Powerex Power Semiconductors
|
| CM75BU-12H |
Four IGBTMOD 75 Amperes/600 Volts 75 A, 600 V, N-CHANNEL IGBT
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| P6SMB47CAT3G |
600 Watt Peak Power Zener Transient Voltage Suppressors 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
|
ON Semiconductor
|
| 1SMB22AT3 1SMB24AT3 1SMB18AT3 1SMB6.0AT3 1SMB5.0AT |
From old datasheet system
600 WATT PEAK POWER
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
http://
MOTOROLA[Motorola, Inc]
ON Semi
MOTOROLA[Motorola Inc]
Motorola Inc
Motorola, Inc.
Motorola Mobility Holdings, Inc.
|
| BT169B BT169G BT169 BT169D BT169G112 BT169G126 |
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Ammo pack axial radial taped 0.8 A, 600 V, SCR, TO-92
Thyristors logic level - I<sub>GT</sub>: 0.2 mA; I<sub>T</sub> (R<sub>MS</sub>): 0.8 A; V<sub>DRM</sub>: 600 V; Package: SOT54 (TO-92); Container: Bulk pack 0.8 A, 600 V, SCR, TO-92
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| CM30TF-12H |
122 x 32 pixel format, LED Backlight available 30 A, 600 V, N-CHANNEL IGBT
Six-IGBT IGBTMOD 30 Amperes/600 Volts
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| NDL5551 NDL5551P NDL5551P1C NDL5551P1D NDL5551P2C |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 50 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信50毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
| NDL5531P NDL5531P1C NDL5531P1D NDL5531P2C NDL5531P |
1 000 to 1 600 nm OPTICAL FIBER COMMUNICATIONS 30 mm InGaAs AVALANCHE PHOTO DIODE MODULE 1 000 600 nm的光纤通信30毫米的铟镓砷雪崩光电二极管模
|
NEC, Corp.
NEC[NEC]
|
