| PART |
Description |
Maker |
| NGTB30N120IHSW |
IGBT 1200V 30A FS1 Induction Heating
|
ON Semiconductor
|
| 7MBR15NE120 |
IGBT MODULE(1200V/15A/PIM) 15 A, 1200 V, N-CHANNEL IGBT
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| 6MBI15S-120 |
IGBT MODULE ( S series)1200V / 15A
|
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| FGA15N120FTD |
1200V, 15A Field Stop Trench IGBT
|
Fairchild Semiconductor
|
| IGW03N120H2NBSP IGP03N120H2NBSP IGB03N120H2NBSP IG |
High Speed CMOS Logic Hex Non-Inverting Buffers 16-SOIC -55 to 125 高 -技
From old datasheet system
HighSpeed 2-Technology
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO247
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT TO220
IGBTs & DuoPacks - 3A 1200V HighSpeed2 IGBT D2Pak
1200V HighSpeed2 and 600V HighSpeed IGBT for switching frequency from 30kHz upwards. Focus applications: Lamp ballast, power supplies ...
|
INFINEON[Infineon Technologies AG]
|
| PS22054 |
1200V/15A low-loss 4th generation IGBT inverter bridge for 3 phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| IRG4PH40KD |
1200V UltraFast 4-20 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.47V @Vge=15V Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.47V, @Vge=15V, Ic=15A)
|
IRF[International Rectifier]
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| V23990-K220-A-P1-14 |
2nd Gen. PIM Size 2, 1200V / 35A
|
Vincotech
|
| SI52144-A01AGM SI52144-A01AGMR |
PCI-EXPRESS GEN 1, GEN 2, & GEN 3 CLOCK QUAD OUTPUT GENERATOR
|
Silicon Laboratories
|
