| PART |
Description |
Maker |
| OC70 OC75 OC66 2N217 OC74 OC65 OC73 OC76 OC77 OC78 |
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 100MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 25V V(BR)CEO | 150MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 300MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 250MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 200MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 10V V(BR)CEO | 50MA I(C) | TO-1
TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | PNP | 35V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 1A I(C) | TO-5
68HC11/Bidirectional-Compatible µP Reset Circuit
TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 18V的五（巴西）总裁| 500mA的一（c）|
|
APEM SA
|
| PMP5201G PMP5201V PMP5201Y PMP5201Y115 PMP5201Y135 |
PNP/PNP matched double transistors; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 45 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| BC461-5 SEMELABLTD-BC461-5E1 |
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | TO-5
Bipolar PNP Device in a Hermetically sealed TO39 Metal Package
|
SEMELAB LTD
Seme LAB
|
| PUMB1 PEMB1 |
PNP-PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 22 kOhm PNP-PNP配电阻型晶体管，R1=22千欧姆，R2=22千欧
PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ
PNP/PNP resistor-equipped transistors; R1 = 22 k楼?, R2 = 22 k楼?
|
NXP Semiconductors N.V.
|
| BC556B BC556 BC558B BC557B BC557C BC557A |
PNP Amplifier Transistor(集电发射极电45V，集电极-基极电压-50V的PNP放大器晶体管) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
Amplifier Transistors(PNP Silicon)
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ONSEMI[ON Semiconductor]
|
| PMBT3906YS PMBT3906YS115 |
40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd
|
NXP Semiconductors N.V.
|
| 2N538 2N522 2N941 2N586 2N502A 2N795 2N738 2N779 2 |
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | TO-5
TRANSISTOR | BJT | PNP | 8V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | TO-9
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | TO-9
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 200MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 12V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 25V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | PNP | 16V V(BR)CEO | 1A I(C) | TO-5
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 50MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | TO-18 晶体管|晶体管|叩| 50V五（巴西）总裁|8
TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 500MA I(C) | TO-5 晶体管|晶体管|进步党| 30V的五（巴西）总裁| 500mA的一（c）|
|
Central Semiconductor, Corp.
Microsemi, Corp.
|
| SLA4390 |
PNP NPN Darlington Transistor (H-Hridge)(PNP NPN达林顿晶体管H桥）) 5 A, 100 V, 4 CHANNEL, NPN AND PNP, Si, POWER TRANSISTOR
|
Sanken Electric Co., Ltd.
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| 2SB1197-R 2SB1197 2SB1197-P 2SB1197-Q |
PNP Silicon Epitaxial Transistors 800 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Micro Commercial Components, Corp.
MCC[Micro Commercial Components]
|
