| PART |
Description |
Maker |
| SZ1.5A330 SZ1.5A220 SZ1.5A240 SZ1.5A270 SZ1.5A300 |
HIGH VOLTAGE ZENER DIODES
240 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
270 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
220 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
330 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
300 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
430 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
470 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
390 V, 1.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE HERMETIC SEALED, GLASS PACKAGE-2
|
Solid States Devices, Inc
Solid State Devices, Inc.
SOLID STATE DEVICES INC
|
| MSB20A |
GLASS PASSIVATED SURFACE MOUNT GLASS PASSIVATED BRIDGE RECTIFIERS
|
HY ELECTRONIC CORP.
|
| 135D306X0006C2 135D206X0010C2 135D476X0010C2 135D1 |
Wet Tantalum Capacitors, Axial, Tantalum-Case with Glass-to-Tantalum Hermetic Seal, for - 55°C to 200°C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55?? to 200?? Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55∑C to 200∑C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55隆?C to 200隆?C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55掳C to 200掳C Operation
Tantalum-Case with Glass-to-Tantalum Hermetic Seal For-55°C to 200°C Operation
|
VISAY[Vishay Siliconix]
|
| EGP30A- EGP30J EGP30A |
Fast Rectifiers (Glass Passivated)
3.0 Ampere Glass Passivated High Efficiency Rectifiers(平均整流电流3.0安培高效率玻璃钝化整流器)
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| WRA0505P-3WNBSP WRAP-3W WRA0505P-3W WRA0509P-3W WR |
DIODE ZENER SINGLE 1000mW 11Vz 23mA-Izt 0.05 5uA-Ir 8.4Vr DO41-GLASS 5K/AMMO 宽输入的隔离
DIODE ZENER SINGLE 1000mW 10Vz 25mA-Izt 0.05 10uA-Ir 7.6Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 13Vz 19mA-Izt 0.05 5uA-Ir 9.9Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 15Vz 17mA-Izt 0.05 5uA-Ir 11.4Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 12Vz 21mA-Izt 0.05 5uA-Ir 9.1Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 15Vz 17mA-Izt 0.05 5uA-Ir 11.4Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 13Vz 19mA-Izt 0.05 5uA-Ir 9.9Vr DO41-GLASS 5K/AMMO
DIODE ZENER SINGLE 1000mW 12Vz 21mA-Izt 0.05 5uA-Ir 9.1Vr DO41-GLASS 5K/AMMO
WIDE INPUT ISOLATED & REGULATED 3W OUTPUT [
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| BYV27100 BYV27150 BYV27200 BYV2750 BYV27 DIODESINC |
200V; 2.0A super-fast glass body rectifier
150V; 2.0A super-fast glass body rectifier
100V; 2.0A super-fast glass body rectifier
2.0A SUPER-FAST GLASS BODY RECTIFIER 安培的电流超快速整流玻璃钢车身
|
DIODES[Diodes Incorporated]
Diodes Inc.
Diodes, Inc.
|
| 1N4003G-A 1N4003G-B 1N4001G-A 1N4001G-B 1N4002G-B |
1.0A GLASS PASSIVATED RECTIFIER 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 800 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 50 V, SILICON, SIGNAL DIODE, DO-41
1.0A GLASS PASSIVATED RECTIFIER 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41
|
Diodes Inc.
Anderson Power Products, Inc.
Diodes, Inc.
|
| S3K-13 S3MB |
Glass Passivated Die Construction
3.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER
|
Diodes Incorporated
|
| GS1J-T1 GS1J-T3 GS1A GS1M-T3 GS1A-T1 GS1A-T3 GS1B- |
CHOKE RF CONFORMAL COATED 0.68UH
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 安培表面贴装玻璃钝化整流
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC
|
WTE[Won-Top Electronics]
Won-Top Electronics Co., Ltd.
WON-TOP ELECTRONICS CO LTD
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
|
