PART |
Description |
Maker |
MGFC39V5964A C395964A MGFC39V5964 |
5.9 - 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET From old datasheet system 5.9~6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC41V5964 |
5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964_97 MGFC44V5964 MGFC44V596497 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MGFC44V5964 |
5.9-6.4GHz BAND 24W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
DEA202441BT-2106A2 DEA202450BT-1261A2 DEA202450BT- |
Multilayer Band Pass Filters For 2.4GHz W-LAN/Bluetooth
|
TDK Electronics
|
TQP2420G |
2.4GHz ISM Band InGaP HBT Power Amplifier
|
TRIQUINT[TriQuint Semiconductor]
|
RF5745PCK-410 |
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE
|
RF Micro Devices
|
GW715153 |
2.4GHz/5.8GHz Dipole Antenna for ISM Band and WLAN IEEE 802.11a/b/g/h
|
List of Unclassifed Man...
|
R414730000 |
ATTENUATOR, N 2W 30DB 12.4GHZATTENUATOR, N 2W 30DB 12.4GHZ; Impedance:50R; Attenuation:30dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
TIM6472-25UL TIM5964-12UL09 |
HIGH POWER P1dB=44.5dBm at 6.4GHz to 7.2GHz HIGH POWER P1dB=41.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
WPANTDP028 |
This single band dipole antenna is an ideal solution for single band WLAN access points operating in the ISM 2.45GHz band
|
World Produts Inc.
|
SKY77570-12 |
Quad-band cellular handsets encompassing Tx-Rx Front-End Module for Quad-Band GSM /GPRS / EDGE and TD-SCDMA with 6-Band Antenna Switch Support
|
Skyworks Solutions Inc.
|