| PART |
Description |
Maker |
| KAI-1020-CBA-FD-BA |
IMAGE SENSOR-CCD, 1000(H) X 1000(V) PIXEL, 500mV, SQUARE, THROUGH HOLE MOUNT
|
KODAK IMAGE SENSOR SOLUTIONS
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
| HER108G-AP HER103G HER107G HER101G |
1 A, 1000 V, SILICON, SIGNAL DIODE, DO-41 PLASTIC PACKAGE-2
1.0 Amp Glass Passivated High Efficient Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| CMR1U-0110 CMR1U-10 CMR1U-02 CMR1U-06 CMR1U-04 |
SURFACE MOUNT ULTRA FAST RECOVERY SILICON RECTIFIER 1 AMP, 100 THRU 1000 VOLTS
1 A, 1000 V, SILICON, SIGNAL DIODE
|
Central Semiconductor Corp
|
| G1PM109N-VLF G1PM109N-V-LF |
1000 BASE ?T MAGNETICS MODULES
Compliant with IEEE 802.3ab standard for 1000 BASE-T
|
Bothhand USA, LP.
|
| UF5408GP-AP UF5400GP11 |
3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD ROHS COMPLIANT, PLASTIC PACKAGE-2
3 Amp Ultra Fast Glass Passivated Recovery Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
|
| 3296-1000 |
KR Electronics part number 3296-1000 is a 1000 MHz highpass filter
|
KR Electronics, Inc.
|
| MB251W-BP MB254W-BP MB2510W-BP MB2505W-BP MB256W-B |
25 Amp Single Phase Bridge Rectifier 50 to 1000 Volts
RECT BRIDGE 25A 1000V WIRE LEADS 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
|
天津环球磁卡股份有限公司
http://
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| FAR-F5CH-940M50-L2MD FAR-F5CH-911M50-L2DL FAR-F5CH |
Piezoelectric SAW BPF
(700 to 1000 MHz)(压电表面声波带通滤波器(7001000 MHz))
Piezoelectric SAW BPF (700 to 1000 MHz)(压电表面声波带通滤波器(7001000 MHz)) SAW FILTER
Piezoelectric SAW BPF (700 to 1000 MHz)(???琛ㄩ?澹版尝甯??婊ゆ尝?è700??1000 MHz))
|
Fujitsu Limited
Fujitsu, Ltd.
FUJITSU LTD
|
| MTY14N100E_D ON2710 MTY14N100E MTY14N100 MTY14N100 |
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM TMOS14安培，功率场效应晶体000伏特的RDS（on）\u003d 0.80欧姆
TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM 14 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
From old datasheet system
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate
|
Motorola Mobility Holdings, Inc.
MOTOROLA[Motorola, Inc]
ON Semiconductor
|
| BCM5700 |
PCI - X 10/100/1000 BASE -T CONTROLLER 的PCI - 10/100/1000 Base - T型控制器
|
Electronic Theatre Controls, Inc.
ETC
|
