PART |
Description |
Maker |
ISL9R860P2 ISL9R860S3ST ISL9R860S2 ISL9R860S3S ISL |
8A, 600V Stealth Single Diode 8A, 600V Stealth Diode 8A, 600V Stealth⑩ Diode 8A, 600V StealthDiode
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FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
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ISL9K460P3 |
4A, 600V StealthDual Diode 4 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AB 4A, 600V Stealth⑩ Dual Diode 4A, 600V Stealth Dual Diode
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
|
CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
FCB20N60F12 |
600V N-Channe MOSFET 600V, 20A, 190mΩ
|
Fairchild Semiconductor
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRG4BC20U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=6.5A)
|
IRF[International Rectifier]
|
IRG4PC30S IRG4PC30SPBF |
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A)
|
IRF[International Rectifier]
|
IRG4BC30U |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC30K-S IRG4BC30KS IRG4BC30K-STRR |
600V UltraFast 8-25 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
|
IRF[International Rectifier]
|
IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
IRG4BC20FD IRG4BC20FDPBF |
600V Fast 1-8 kHz Copack IGBT in a TO-220AB package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.66V, @Vge=15V, Ic=9.0A)
|
International Rectifier IRF
|
IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|