| PART |
Description |
Maker |
| SB200-05H |
50V, 20A Rectifier 50V20A条整流器
50V/ 20A Rectifier
50V 20A Rectifier
50V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
|
| STB20PF75 STB20PF75T4 |
P-CHANNEL 75V - 0.10 OHM - 20A DPAK STripFET™II POWER MOSFET
P-CHANNEL 75V - 0.10 ?- 20A D2PAK STripFET II POWER MOSFET
P-CHANNEL 75V - 0.10 з - 20A D?PAK STripFETII POWER MOSFET P通道75V 0.10з - 20A?巴基斯STripFET⑩二功率MOSFET
|
ST Microelectronics
STMicroelectronics N.V.
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| SRJ23A3BBBNN |
Rocker Switch; Circuitry:SPST-NO; Switch Operation:On-On; Contact Current Max:20A; Contact Rating:20A; Leaded Process Compatible:Yes; Mounting Type:Panel; Peak Reflow Compatible (260 C):No; Switch Function:SPST-NO
|
THE CHERRY CORP
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 在不扩散核武器条约高高速IGBT的技
IGBTs & DuoPacks - 20A 600V TO220 IGBT
IGBTs & DuoPacks - 20A 600V TO247 IGBT
|
Infineon Technologies AG
http://
Infineon Technologies A...
|
| HUF75329D3S HUF75329D3 |
20A/ 55V/ 0.026 Ohm/ N-Channel UltraFET Power MOSFETs
20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.026 Ω,N沟道,UltraFET功率MOS场效应管)
|
Intersil Corporation
|
| OMXXXXSM OM5221SM OM5222SM OM5223SM OM5224SM OMXXX |
200V 20A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-3 package
150V 20A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-3 package
100V 20A Hi-Rel Ultra-Fast Common Cathode Diode in a SMD-3 package
Hermetic Surface Mount Package, 20 Amp, 50 To 200 Volts, 35 ns trr
|
IRF[International Rectifier]
|
| 20ETS08FP 20ETS12FP 20ETS16FP 20ETS 20ETS08 20ETS1 |
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
800V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1200V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
1600V 20A Std. Recovery Diode in a TO-220AC Full-Pak (2-Pin)package
INPUTRECTIFIERDIODETO-220FULLPAK
SURFACEMOUNTABLEINPUTRECTIFIERDIODE
|
International Rectifier
InternationalRectifier
|
| ISL9G1260EP3 ISL9G1260ES3 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-220AB
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 20A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五（巴西）国际消费电子展|甲一（c）|63AB
|
Hynix Semiconductor, Inc.
|
| STB20NM60 STB20NM60-1 STP20NM60 STP20NM60FP STB20N |
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
STMicroelectronics
|
