| PART |
Description |
Maker |
| SM145G0 |
FUSIBLE ALLOY THERMAL SENSITIVE TYPE/ 0.5 AMPERES 250 Va.c. and 3 and 5 AMPERES 50 Vd.c. Rated Current
|
NEC
|
| NL741 |
(NL740 / NL741) THYRATRON TUBES 4 Amperes dc - 50 Amperes Peak
|
ETC
|
| CR3CM |
Lead-mount, Phase Control SCR 3 Amperes/400-600 Volts 铅安装，相位控制晶闸3 Amperes/400-600伏特
|
Powerex, Inc.
|
| KBU8010 KBU804 KBU600 KBU800 |
(KBU600 - KBU6010) Amperes / KBU
(KBU800 - KBU8010) Amperes / KBU
|
Max-lion
|
| KBL408 KBL404 KBL402 KBL400 KBPC300 KBL401 |
(KBL400 - KBL4010) Amperes / KBU
(KBPC300 - KBPC3010) Amperes / KBU
|
Max-lion
|
| CR6CM600-8 CR6CM CR6CM400-12 CR6CM400-8 CR6CM600-1 |
Lead-mount/ Phase Control SCR 6 Amperes/400-600 Volts
Lead-mount, Phase Control SCR 6 Amperes/400-600 Volts 铅安装，相位控制晶闸 Amperes/400-600伏特
|
Powerex Power Semicondu...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
|
| MTP12N10E MTP12N10E_D ON2545 MTP12N10E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 12 AMPERES 100 VOLTS RDS(on) = 0.16 OHM
TMOS POWER FET 12 AMPERES 60 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| CM600HB-90H |
Single IGBTMOD?/a> HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 600 Amperes/4500 Volts
Single IGBTMOD HVIGBT 600 Amperes/4500 Volts
Single IGBTMODHVIGBT 600 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
| CM400HB-90H |
Single IGBTMOD?/a> HVIGBT 400 Amperes/4500 Volts
Single IGBTMOD⑩ HVIGBT 400 Amperes/4500 Volts
Single IGBTMOD HVIGBT 400 Amperes/4500 Volts
Single IGBTMODHVIGBT 400 Amperes/4500 Volts
|
POWEREX[Powerex Power Semiconductors]
|
