| PART |
Description |
Maker |
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| TA8263BH TA8263 |
Max Power 43 W BTL 4 ch Audio Power IC
Max Power 43 W BTL ??4 ch Audio Power IC
Max Power 43 W BTL 】 4 ch Audio Power IC
IC,AUDIO AMPLIFIER,QUAD,BIPOLAR,ZIP,25PIN,PLASTIC
Max Power 43 W BTL × 4 ch Audio Power IC
Max Power 43 W BTL x 4 ch Audio Power IC
|
Toshiba Semiconductor
|
| AUIRF2905ZSTRL AUIRF2905ZSTRR AUIRFR2905ZTR AUIRFR |
HEXFET垄莽 Power MOSFET
HEXFET庐 Power MOSFET
HEXFET? Power MOSFET
42 A, 55 V, 0.0145 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Ultra Low On-Resistance
|
International Rectifier
List of Unclassifed Man...
|
| STR-Y6753 STR-Y6763 STR-Y6754 STR-Y6735 STR-Y6700 |
Power IC for Quasi-Resonant Mode Switching Power Supplies with Low Standby Power
|
Sanken electric
|
| GSM11 |
Low Power Medical Power Supplies 11 Watt AC/DC Universal Input Power Supply
|
SL Power Electronics
|
| 2SD1719 |
Power Device - Power Transistors - General-Purpose power amplification
Silicon NPN triple diffusion planar type
|
Panasonic Semiconductor
|
| IRLZ24N-006 IRL530N-015PBF IRL530N-031PBF IRL2505- |
18 A, 55 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
15 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
104 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
120 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 100 V, 0.026 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
39 A, 20 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
61 A, 20 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
56 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
85 A, 20 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
100 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
24 A, 30 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
27 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
41 A, 55 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
48 A, 20 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
77 A, 55 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Bourns, Inc.
Vishay Intertechnology, Inc.
|
| U5T12.12.5 R5T12.2.5 U28S15.45 U28S24.4 R28D15.22 |
Low power quad operational amplifiers
High power 3-phase auxiliary power supply evaluation board based on L5991 and ESBT STC08DE150HV
Evaluation board using 1x SD3932 for HF transmitters
VIPer12A travel adaptor 3.6W output
Analog IC 模拟IC
RF power amplifier using 1 x PD55008 N-channel enhancement-mode lateral MOSFETs 模拟IC
RF power amplifier using 1 x PD55008L 模拟IC
|
Electronic Theatre Controls, Inc.
KEMET Corporation
Bourns, Inc.
MITSUMI ELECTRIC CO., LTD.
|
| 2SB1054 |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SD1444A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
| 2SB0936 2SB0936A 2SB936 2SB936A |
Power Device - Power Transistors - General-Purpose power amplification
|
Panasonic
|
|
