| PART |
Description |
Maker |
| 222233860274 222233860103 |
MicroMonitor Chip 电容270NF 300V
CAPACITOR 10NF 300V 电容10NF 300V
|
Vishay Intertechnology, Inc.
|
| SMLA42CSM |
SILICON NPN HIGH VOLTAGE TRANSISTOR IN CERAMIC SURFACE MOUNT PACKAGE
Silicon NPN High Voltage Transistor In Ceramic Surface Mount (Vcbo:300V,Vceo:300V,Vebo:6V)(N沟道增强高电压功率MOS场效应管(Vcbo:300V,Vceo:300V,Vebo:6V)) 高压硅npn型晶体管在陶瓷表面贴装（Vcbo00V，Vceo00V，Vebo6V的）（不适用沟道增强型，高电压功率马鞍山场效应管（Vcbo00V，Vceo00V，Vebo6V的）
|
SemeLAB
SEME-LAB[Seme LAB]
Motorola Mobility Holdings, Inc.
|
| STP4NB30 STP4NB30FP |
N-CHANNEL 300V 1.8 OHM 4A TO-220/TO-220FP POWERMESH MOSFET
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh?/a> MOSFET
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh MOSFET
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMesh⑩ MOSFET
N-CHANNEL 300V - 1.8ohm - 4A - TO-220/TO-220FP PowerMeshMOSFET N沟道300V - 1.8ohm -A - TO-220/TO-220FP PowerMesh⑩MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| STW54NK30Z |
N-CHANNEL 300V - 0.052Ohm - 54A TO-247
N-CHANNEL 300V - 0.052з - 54A TO-247 Zener-Protected SuperMESH⑩ MOSFET
N-CHANNEL 300V - 0.052 - 54A TO-247 Zener-Protected SuperMESH MOSFET
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 93.732.5053.0 |
Connector; Gender:Male; No. of Contacts:8; Series:ST series ; Body Material:Thermoplastic; Connector Shell Size:64 x 66mm; Contact Plating:Tin; Operating Voltage:300V; Wire Size (AWG):22-12; Voltage Rating:300V RoHS Compliant: Yes
|
WIELAND ELECTRIC INC
|
| 2SC1757D 2SC1756C 2SC1756E |
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 700MA I(C) | TO-220AB
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 700MA I(C) | TO-220 晶体管|晶体管|叩| 300V五（巴西）总裁| 700mA的一（c）|20
|
Samsung Semiconductor Co., Ltd.
|
| C2688BPL CSC2688 CSC2688BPL CSC2688G CSC2688O CSC2 |
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 200.000A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 160 - 250 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 60 - 120 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 40 - 80 hFE.
10.000W Medium Power NPN Plastic Leaded Transistor. 300V Vceo, 0.200A Ic, 100 - 200 hFE.
|
Continental Device India Limited
|
| 8ETH03 8ETH03S 8ETH03-1 |
Ultrafast Rectifier
300V 8A Ultra-Fast Discrete Diode in a TO-262 package
300V 8A Ultra-Fast Discrete Diode in a D2-Pak (UltraFast) package
|
IRF[International Rectifier]
|
| FQD2N30 FQU2N30 |
300V N-Channel MOSFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FDB14N30 FDB14N30TM |
300V N-Channel MOSFET
|
Fairchild Semiconductor
|
| AOI468 AOD468 |
300V,11.5A N-Channel MOSFET
|
ShenZhen FreesCale Electronics. Co., Ltd
|
| FGH50N3 |
300V, PT N-Channel IGBT
300V/ PT N-Channel IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
