PART |
Description |
Maker |
S8M 1N5614 S6M 1N5618 S2M |
Axialleaded Hermetically Sealed Standard Recovery Rectifier Diode(????靛?600V,骞冲?姝e??垫?2A锛?酱??????瀵??????㈠??存?浜??绠? RECTIFIER, up to 1kV, 2A, 2μs RECTIFIER, up to 1kV, 2A, 2楼矛s
|
Semtech Corporation
|
70HFL100 70HFLR100S05 70HFLR10S02 70HFL40 |
Diode Switching 100V 70A 2-Pin DO-5 Diode Switching 1KV 70A 2-Pin DO-5 Diode Switching 400V 70A 2-Pin DO-5
|
New Jersey Semiconductor
|
P6AU-2415E P6AU-0505 P6AU-0505E P6AU-0512E P6AU-05 |
Input voltage:5V, output voltage 3.3V (300mA), 1KV isolated 1W unregulated single output Input voltage:5V, output voltage 15V (70mA), 1KV isolated 1W unregulated single output Input voltage:5V, output voltage 7.2V (140mA), 1KV isolated 1W unregulated single output 1KV ISOLATED 1W UNREGULATED SINGLE OUTPUT SIP4 1KV交隔W的未稳压单输出学校改善工 Input voltage:5V, output voltage 12V (100mA), 1KV isolated 1W unregulated single output
|
PEAK[PEAK electronics GmbH] Electronic Theatre Controls, Inc.
|
CMPD7006S CMPD7006 CMPD7006A CMPD7006C |
SMD Switching Diode Dual: Common Anode SMD Switching Diode Dual: In Series SMD Switching Diode Single: High Voltage SMD Switching Diode Dual: Common Cathode SURFACE MOUNT VERY HIGH VOLTAGE SILICO SWITCHING DIODE
|
CENTRAL[Central Semiconductor Corp]
|
BAS21M3T5G |
SOT-723 SS Switching Diode SIGNAL DIODE High Voltage Switching Diode
|
ON Semiconductor
|
FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06K |
TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048 TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C) TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c TRANSISTOR | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3 TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c
|
Delta Electronics, Inc. Fuji Electric Holdings Co., Ltd. Infineon Technologies AG
|
MMBD4448HSDW-TP MMBD4448HAQW-TP |
DIODE SWITCHING 80V 250MA SOT363 0.25 A, 80 V, 4 ELEMENT, SILICON, SIGNAL DIODE 200mW Switching Diodes
|
Micro Commercial Components, Corp.
|
SMBD914 MMBD914 |
0.25 A, 100 V, SILICON, SIGNAL DIODE Silicon Switching Diode For high-speed switching applications Qualified according AEC Q101
|
Infineon Technologies AG
|
M1MA142KT1G M1MA141KT1 M1MA142KT1 M1MA141K M1MA142 |
SC-70/SOT-323 PACKAGE SINGLE SILICON SWITCHING DIODE 40/80 V-100 mA SURFACE MOUNT Single Switching Diode
|
ONSEMI[ON Semiconductor]
|
PSD-0505 PSD-0509S PSD-3R305S PSD-0505S PSD-0512S |
1KV ISOLATED 1W UNREGULATED SINGLE OUTPUT SMD 1KV交隔1W的未稳压单输出贴 PSD-XXXXS 1KV ISOLATED 1W UNREGULATED SINGLE OUTPUT SMD
|
Electronic Theatre Controls, Inc. PEAK[PEAK electronics GmbH] ETC[ETC] List of Unclassifed Manufacturers
|
1N4148 |
SMALL SIGNAL SWITCHING DIODE Fast Switching Diode
|
Chenyi Electronics Comchip Technology
|