| PART |
Description |
Maker |
| SSF6N80A |
Advanced Power MOSFET(220V, 2.0OHM, 4.5A)
|
FAIRCHILD[Fairchild Semiconductor]
|
| SMJE-3V08W1P313 |
Acrich2 - 220V 8.7W Bulb Connects directly to AC line voltage
|
Seoul Semiconductor
|
| IRPLDIM2E |
Digital Dimming DALI Ballast for 36W/T8 220V input
|
International Rectifier
|
| FDMC267407 |
N-Channel UltraFET Trench MOSFET 220V, 7.0A, 366m N沟道UltraFET沟道MOSFET 220.0A，三六六米ヘ
|
Fairchild Semiconductor, Corp.
|
| LM2423TE |
220V Monolithic Triple Channel 15 MHz CRT DTV Driver 1 CHANNEL, VIDEO AMPLIFIER, PZFM11
|
Honeywell International, Inc.
|
| ECG2984 ECG2375 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 15A I(D) | TO-220AB
FAN AC 92X25 110/220V, 21cfm 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 40A条（丁）|采用TO - 247AD
|
EPCOS AG
|
| DGS20-022A DGSK40-025A DGS20-025A DGSK40-022A |
250V gallium arsenide schottky rectifier
220V gallium arsenide schottky rectifier
|
IXYS[IXYS Corporation]
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| 1.5KE13CA 1.5KE110CA 1.5KE11CA 1.5KE130CA 1.5KE160 |
1500 Watt Mosorb Zener Transient Voltage Suppressors
1500 Watt mosorb zener transient voltage suppressors, 200V
1500 Watt mosorb zener transient voltage suppressors, 220V
1500 Watt mosorb zener transient voltage suppressors, 170V
1500 Watt mosorb zener transient voltage suppressors, 150V
1500 Watt mosorb zener transient voltage suppressors, 120V
1500 Watt mosorb zener transient voltage suppressors, 100V
1500 Watt Mosorb Zener Transient Voltage Suppressors 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE
1500 Watt mosorb zener transient voltage suppressors, 110V
1500 Watt mosorb zener transient voltage suppressors, 130V
1500 Watt mosorb zener transient voltage suppressors, 160V
1500 Watt mosorb zener transient voltage suppressors, 180V
1500 Watt mosorb zener transient voltage suppressors, 250V
|
http://
ONSEMI[ON Semiconductor]
|
| 151-05 151-08 151-07 151-09 152-05 164-18 164-04 1 |
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 6A I(C) | TO-82
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 90V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 10A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 6A I(C) | TO-82
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 6A I(C) | TO-82
晶体管|晶体管|叩| 100V的五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 180V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 140伏特五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管|叩| 50V五（巴西）总裁| 6A条一c）|2
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 100V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 60V的五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 50V五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 70V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 70V的五（巴西）总裁|甲一（c）| STR-5/16
|
Samsung Semiconductor Co., Ltd.
Molex, Inc.
Intel, Corp.
|
| STH03F-SERIES STHA3F-SERIES STA05F-SERIES STAA5F-S |
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Repetitive Reverse Voltage Max, Vrrm:220V; Capacitance:30pF; Holding Current:150mA; Leakage Current:5uA
Transient Surge Protection Thyristor; Thyristor Type:Sidac; Current, It av:2.2A; Package/Case:6-SOIC; Reel Quantity:1500; Capacitance:25pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:160V; Holding Current:150mA RoHS Compliant: NA
Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:40pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:180V; Holding Current:50uA; Mounting Type:Surface Mount
Peripheral IC 外围芯片
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:120V; Capacitance:80pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V 外围芯片
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Current, It av:2.2A; Reel Quantity:2500; Capacitance:20pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:90V; Holding Current:120mA; Mounting Type:Through Hole 外围芯片
Transient Surge Protection Thyristor; Package/Case:DO-214AA; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No; Reel Quantity:2500; Repetitive Reverse Voltage Max, Vrrm:120V; Capacitance:40pF; Holding Current:150mA 外围芯片
|
Sanken Electric Co., Ltd.
TE Connectivity, Ltd.
Keystone Electronics, Corp.
|
