| PART |
Description |
Maker |
| 2729-125 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 2731-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-370M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| HVV1214-025S |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty
|
HVVi Semiconductors, Inc.
|
| TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz
TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP
GHz Technology
Microsemi, Corp.
|
| RFHA1021U |
60W GaN Wide-Band Pulsed Power Amplifier
|
RF Micro Devices
|
| HVV1012-060 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
|
HVVi Semiconductors, Inc.
|
| RFHA1023A |
250W GaN WIDE-BAND PULSED
|
RF Micro Devices
|
| VTU-5192F1 |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|
