| PART |
Description |
Maker |
| 2931-150 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 2729-125 |
Pulsed Power S-Band (Si)
|
Microsemi
|
| 1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 3134-180P |
Pulsed Power S-Band (Si)
|
Microsemi
|
| RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
| MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4
Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
| HVV1011-035 |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| 1214-700P |
700 Watts - 300楼矛s, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
700 Watts - 300μs, 10%, 50V L-Band Pulsed Radar 1200 - 1400 MHz
|
Microsemi Corporation
|
| VTU-5192F1 |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|
