PART |
Description |
Maker |
MSICSN05120CA MSICSN05120CAE3 MSICSN05120CC MSICSN |
SiC Schottky Diodes
|
Microsemi
|
Q67040S4647 SDT08S60 |
Silicon Carbide Schottky Diodes - 8A diode in TO220-2 package Thinq SiC Schottky Diode
|
Infineon Technologies AG
|
LSIC2SD120A10 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current
|
Littelfuse
|
IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
IDH09G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
LSIC2SD120A15 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C.
|
Littelfuse
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
SML10SIC03YC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
SCS106AG1104 |
SiC Schottky Barrier Diode
|
Rohm
|
SCS215AG |
SiC Schottky Barrier Diode
|
Rohm
|