| PART |
Description |
Maker |
| FMDA-10565 |
SiC schottky barrier diodes
|
Sanken
|
| IDW20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH03G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH20G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDW12G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| IDH06G65C512 |
ThinQ! Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes.
|
Infineon Technologies AG
|
| BAS125-06W BAS125-05W BAS125-04W BAS125W |
Schottky Diodes - RF Schottky diode for low-loss, fast-recovery, meter protection, ...
Silicon Schottky Diodes
|
INFINEON[Infineon Technologies AG]
|
| FMDA-10565 |
SiC Schottky Diode
|
Sanken electric
|
| SML10SIC03NC |
SiC SCHOTTKY DIODE
|
Seme LAB
|
| IDH08S120 |
thinQ SiC Schottky Diode
|
Infineon Technologies AG
|
