PART |
Description |
Maker |
154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
|
NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
|
BFG25AW BFG25AW_X BFG25AW/X BFG25X |
NPN 5 GHz wideband transistors C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR NPN 5GHz wideband transistor(NPN 5G赫兹 宽带晶体
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
PUMH20 PEMH20 PUMH20115 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm; Package: SOT363 (SC-88); Container: Tape reel smd 100 mA, 50 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR NPN/NPN resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = 2.2 k-ohm
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
2SD389A 2SD389AQ 2SD389P 2SD601 2SD601AR 2SD601AS |
Si NPN epitaxial planar. General amplifier. Si NPN DIFFUSED JUNCTION MESA 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236 Si NPN diffused juction mesa. Medium power amplifier.
|
Panasonic, Corp. Panasonic Corporation PANASONIC[Panasonic Semiconductor]
|
FTM3725 |
NPN General Purpose Amplifier NPN Transistor 1200 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
|
2N2915 2N2913 2N2917 2N2915CECC 2N2913CECC |
DUAL NPN PLANAR TRANSISTORS IN TO77 PACKAGE Dual NPN Planar Transistor in a TO-77 Hermetic Package(双晶体管TO-77陶瓷封装 NPN 30 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-77
|
SEME-LAB[Seme LAB] TT electronics Semelab Limited TE Connectivity, Ltd.
|
PEMH10 PUMH10 |
NPN/NPN resistor-equipped transistors; R1 = 2.2 k惟, R2 = 47 k惟 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ NPN-NPN resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm NPN-NPN配电阻型晶体管,R1=2.2千欧姆,R2=47千欧
|
NXP Semiconductors N.V.
|
BC618 ON0154 BC618RL BC618ZL1 |
Darlington Transistor NPN From old datasheet system CASE 29-4, STYLE 17 TO-2 (TO-26AA) Darlington Transistors(NPN Silicon) 1000 mA, 55 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-226AA
|
ON Semiconductor
|
BC548ABC BC547ABC ON0152 BC546 BC548C BC548 BC546B |
Amplifier Transistor NPN From old datasheet system CASE 29-04, STYLE 17 TO-2 (TO-226AA) Amplifier Transistors(NPN Silicon) 100 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
ONSEMI[ON Semiconductor]
|
CIL148C CIL148A CIL148B CIL476 CIL768 CIL769 CIL61 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 200MA I(C) | TO-105 TRANSISTOR | BJT | NPN | 12V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 80V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 60V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 200MA I(C) | TO-106 晶体管|晶体管|叩| 45V的五(巴西)总裁| 200mA的一(c)|06 TRANSISTOR | BJT | NPN | 25V V(BR)CEO | TO-106 TRANSISTOR | BJT | NPN | 32V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | TO-106 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | TO-106
|
Electronic Theatre Controls, Inc.
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