| PART |
Description |
Maker |
| MTE8080P |
5mm Metal Can IR Emitter
Infrared Emitter
|
MARKTECH[Marktech Corporate]
|
| 20-1B12IPA015SC-L579F09 20-PB12IPA015SC-L579F09Y |
Open Emitter or Emitter Shunt
|
Vincotech
|
| 2SC5026 |
Silicon NPN Epitaxial Planar Type
Low collector-emitter saturation voltage VCE(sat). High collector-emitter voltage (Base open) VCEO
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| 2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A.
Transistors
|
Usha India Ltd.
|
| SLT4466-XP/RH2-H885A SLT4460-CP/RH2-H260A SLT4466- |
FIBER OPTIC LASER DIODE MODULE EMITTER, 1368-1372nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1408-1412nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR ROHS COMPLIANT PACKAGE
FIBER OPTIC LASER DIODE MODULE EMITTER, 1367-1373nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1348-1352nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, THROUGH HOLE MOUNT, SC/PC CONNECTOR
FIBER OPTIC LASER DIODE MODULE EMITTER, 1528-1532nm, 2500Mbps, PANEL MOUNT, THROUGH HOLE MOUNT
|
Japan Aviation Electronics Industry, Ltd.
Cooper Bussmann, Inc.
|
| TD62504FN TD62502FN TD62503FN E005668 |
From old datasheet system
7ch SINGLE DRIVER : COMMON EMITTER
7ch SINGLE DRIVER(COMMON EMITTER) 7通道单一驱动程序（共发射极）
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| PS2533-1 PS2533-1-V PS2533-2 PS2533-2-V PS2533-4 P |
High Collector To Emitter Voltage Photocoupler(高集电极到发射极电压光电耦合
HIGH COLLECTOR TO EMITTER VOLTATGE HIGH ISOLATION VOLTAGE MULTI PHOTOCOUPLER SIRIES
|
NEC Corp.
NEC[NEC]
|
| STC03DE170HV07 STC03DE170HV |
Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.33 }
Hybrid emitter switched bipolar transistor ESBT㈢ 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT庐 1700V - 3A - 0.33 W
Hybrid emitter switched bipolar transistor ESBT? 1700V - 3A - 0.33 W
|
ST Microelectronics
STMicroelectronics
|
| SFH420 SFH425 Q62702-P0330 Q62702-P1690 |
Mica Film Capacitor; Capacitance:33pF; Capacitance Tolerance: /- 5 %; Working Voltage, DC:300V
GaAs-IR-Lumineszenzdiode 0.5 in SMT-Gehuse GaAs Infrared Emitter in SMT Package
GaAs-IR-Lumineszenzdiode in SMT-Gehause GaAs Infrared Emitter in SMT Package
From old datasheet system
|
Siemens Semiconductor G...
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MAX692 MAX692CPA MAX692EJA MAX692EPA MAX692MJA MAX |
Octal D-Type Edge Triggered Flip-Flops with 3-State Outputs 20-CFP -55 to 125 微处理器监控电路
IGBT Module; Transistor Polarity:N Channel; Collector Emitter Voltage, Vceo:1.2kV; Collector Emitter Saturation Voltage, Vce(sat):3.2V; Power Dissipation, Pd:1140W; Package/Case:Module; C-E Breakdown Voltage:1200V
From old datasheet system
POWER SUPPLY SUPERVISOR,CMOS,DIP,16PIN,PLASTIC
Microprocessor Supervisory Circuits
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
Maixm
Maxim Integrated Products Inc
MAXIM - Dallas Semiconductor
|
| 0510-50A |
50 W, 28 V, 500-1000 MHz common emitter transistor
50 Watts, 28 Volts, Class AB Defcom 500 - 1000 MHz
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3.7A I(C) | SOT-324VAR
晶体管|晶体管|叩| 60V的五（巴西）总裁| 3.7AI（丙）|的SOT - 324VAR
500-1000 MHz, Class AB, Common Emitter; fO (MHz): 1000; P(out) (W): 50; P(in) (W): 10; Gain (dB): 7; Vcc (V): 28; ICQ (A): 0.1; Case Style: 55AV-2
|
GHZTECH[GHz Technology]
MICROSEMI POWER PRODUCTS GROUP
|
