| PART |
Description |
Maker |
| PBSS303PX |
30 V, 5.1 A PNP low VCEsat (BISS) transistor 30伏，6安PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| PBSS5130T |
30 V; 1 A PNP low VCEsat (BISS) transistor 30伏，1PNP型低饱和压降（BISS）晶体管
|
NXP Semiconductors N.V.
|
| Q67000-A5066 TDA4605-3 TDA46053 |
PWM Control IC for SMPS using MOS-Tra...
Control IC for Switched-Mode Power Supplies using MOS-Transistor
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| PBSS303ND PBSS303ND115 |
60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
NXP Semiconductors N.V.
|
| PBSS5580PA PBSS5580PA-15 |
80 V, 4 A PNP low V_CEsat (BISS) transistor 4000 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR
80 V, 4 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors
|
| PBRN123Y PBRN123YK PBRN123YS PBRN123YT |
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 2.2 k?? R2 = 10 k??
|
NXP Semiconductors
|
| PBRN113Z PBRN113ZK PBRN113ZS PBRN113ZT |
NPN 800 mA, 40 V BISS RETs; R1 = 1 kOhm, R2 = 10 kOhm
NPN 800 mA, 40 V BISS RETs; R1 = 1 k? R2 = 10 k?
NPN 800 mA, 40 V BISS RETs; R1 = 1 k搂?, R2 = 10 k搂?
|
NXP Semiconductors
|
| PBLS4001D |
40 V PNP BISS loadswitch
|
NXP Semiconductors
|
