| PART |
Description |
Maker |
| IRF452 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 12A.
|
General Electric Solid State
|
| PST993 PST993C PST993D PST993E PST993F PST993G PST |
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-2.2A; On-Resistance, Rds(on):0.1ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
MOSFET, P, SOT-23; Transistor type:MOSFET; Current, Id cont:2.2A; Resistance, Rds on:0.1R; Voltage, Vgs Rds on measurement:4.5V; Case style:SOT-23 (TO-236); Current, Id max:2.2A; Current, Idm pulse:10A; Marking, SMD:L1; Pins, No. RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2.1A; On-Resistance, Rds(on):0.085ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SOT-23; Leaded Process Compatible:No
System Reset
|
MITSUMI ELECTRIC CO LTD
ETC[ETC]
Mitsumi Electronics, Corp.
|
| IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A.
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A.
Power MOS Field-Effect Transistors
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State
GE Solid State
|
| SP8855 SP8855E |
2.8GHz Parallel Load Professional Synthesiser
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:15A; On-Resistance, Rds(on):10mohm; Rds(on) Test
|
Mitel Semiconductor
MITEL[Mitel Networks Corporation]
|
| HCF4006B HCF4006BC1 HCF4006BEY HCF4006BM1 HCC_HCF4 |
18-STAGE STATIC SHIFT REGISTER
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:50A; On-Resistance, Rds(on):28mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Drain-Source Breakdown Voltage:60V 18 -阶段静态移位寄存器
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
ST Microelectronics
|
| MAX11014BGTMT MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers
Automatic RF MESFET Amplifier Drain-Current Controllers SPECIALTY CONSUMER CIRCUIT, PQCC48
|
Maxim Integrated Produc...
Maxim Integrated Products, Inc.
|
| ADM3311 ADM3311E ADM3311EARS-REEL25 ADM3311EARU-RE |
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle?/a>
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle⑩
15 kV ESD Protected. 2.7 V to 3.6 V Serial Port Transceiver with Green Idle
JFET; Breakdown Voltage, V(br)gss:40V; Zero Gate Voltage Drain Current Min, Idss:-4mA; Zero Gate Voltage Drain Current Max, Idss:-16mA; Gate-Source Cutoff Voltage Max, Vgs(off):9V; Continuous Drain Current, Id:-16mA RoHS Compliant: No
15 kV ESD Protected, 2.7 V to 3.6 V Serial Port Transceiver with Green Idle 15 kV的ESD保护.7 V.6 V绿色串口收发闲置
|
AD[Analog Devices]
Analog Devices, Inc.
|
| STBS056 STBS5D0 STBS010 STBS011 STBS012 STBS013 ST |
SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR
JFET; Continuous Drain Current, Id:1mA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.5V; Leaded Process Compatible:No; Mounting Type:Through Hole; On-Resistance, Rds(on):750ohm RoHS Compliant: No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:90uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-1.8V; Leaded Process Compatible:No
JFET; Transistor Polarity:N Channel; Package/Case:TO-226AA; Continuous Drain Current, Id:240uA; Current Rating:50mA; Gate-Source Breakdown Voltage:-40V; Gate-Source Cutoff Voltage:-3V; Leaded Process Compatible:No
MOSFET, N SC-75AMOSFET, N SC-75A; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:20V; Case style:SC-75A; Current, Id cont:0.5A; Current, Idm pulse:1A; Power, Pd:0.15W; Resistance, Rds on:1.25R; SMD:1; Depth,
|
Electronics Industry Public Company Limited
EIC Semiconductor
EIC[EIC discrete Semiconductors]
EIC discrete Semiconduc...
|
| 2SK635 |
Drain Current ?ID=3A@ TC=25C
|
Inchange Semiconductor ...
|
| 2SK1703 |
Drain Current ?ID= 5A@ TC=25C
|
Inchange Semiconductor ...
|
