PART |
Description |
Maker |
PNP3055E |
PowerMOS transistor. Drain-source voltage 60 V. Drain current(DC) 12 A.
|
Philips
|
IRFF130 IRFF131 IRFF132 IRFF133 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 7.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 8.0A. N-CHANNEL ENHANCEMENT-MODE POWER FIELD-EFFECT TRANSISTORS N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 7.0A.
|
General Electric Solid State GE Solid State
|
MAX11014BGTMT MAX11015BGTM |
Automatic RF MESFET Amplifier Drain-Current Controllers Automatic RF MESFET Amplifier Drain-Current Controllers SPECIALTY CONSUMER CIRCUIT, PQCC48
|
Maxim Integrated Produc... Maxim Integrated Products, Inc.
|
AMS5010KT AMS5010JT AMS5010NT AMS5010LN AMS5010HN |
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:40V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):0.014ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-252; Leaded Process Compatible:No 1.2V的电压基 1.2V VOLTAGE REFERENCE 1.2V的电压基
|
Advanced Monolithic Systems, Inc. ADMOS[Advanced Monolithic Systems]
|
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR |
MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-30V; Continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护 MOSFET, DUAL NN POWERPAKMOSFET, DUAL NN POWERPAK; Transistor type:MOSFET; Transistor polarity:Dual N; Voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-20V; Continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No MOSFET, DUAL, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; Voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes (ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16/8/4/2/1KbitSerialICBusEEPROM
|
STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
2SK803 |
Drain Current ?ID=8A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1603 |
Drain Current ?ID= 2.5A@ TC=25C
|
Inchange Semiconductor ...
|
2N20 |
Drain Current ID= 2A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1082 |
Drain Current ?ID=6A@ TC=25C
|
Inchange Semiconductor ...
|
2SK755 |
Drain Current ?ID=5A@ TC=25C
|
Inchange Semiconductor ...
|
2SK1224 |
Drain Current ?ID=4A@ TC=25C
|
Inchange Semiconductor ...
|