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IPT1206-CEB -    High current density due to double mesa technology

IPT1206-CEB_8951981.PDF Datasheet


 Full text search :    High current density due to double mesa technology


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PART Description Maker
BD241CFP Transient Surge Protection Thyristor; Package/Case:MS-013; Current, It av:2.2A; Reel Quantity:1500; Capacitance:80pF; Current Rating:2.2A; Forward Current:5A; Forward Voltage:200V; Holding Current:150mA 晶体管|晶体管|叩| 100V的五(巴西)总裁| 3A条一(c)| TO - 220AB现有
Samsung Semiconductor Co., Ltd.
Q60103-Y32-E Q60103-Y32-F Q60103-Y23-F Q60103-Y23- Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes PNP晶体管为自动输入
Standard Recovery Rectifier; Forward Current:25A; Forward Current Average:15.9A; Forward Current Avg Rectified, IF(AV):15.9A; Forward Surge Current Max, Ifsm:350A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
PNP TRANSISTORS FOR AF INPUT STAGES
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
FS1UM-18A Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
TA20141803DH SCR Thyristor; Gate Trigger Current Max, Igt:200mA; Current, It av:1800A; Package/Case:TA2; Repetitive Reverse Voltage Max, Vrrm:1400V; Current Rating:2820A RoHS Compliant: Yes
POWEREX INC
M5289 M5285 M5293 M5295 M5283 M5304 M5299 M5292 M5 Current Limiter Diode
4.3 mA, SILICON, CURRENT REGULATOR DIODE
JIGH RELIABILITY CURRENT REGULATOR DIODES JIGH可靠性电流调节二极管
HEADER STRAIGHT 34 WAY
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HEADER R/A 50 WAY
Dual/Triple Ultra-Low-Voltage SOT23 µP Supervisory Circuits
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HIGH RELIABILITY CURRENT REGULATOR DIODES 1.5 mA, SILICON, CURRENT REGULATOR DIODE, DO-35
MICROSEMI CORP-SCOTTSDALE
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
STK10C68-S30I STK10C68-C30I NVRAM (EEPROM Based)
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:10mA; Package/Case:3-TO-92; Current, It av:0.8A; Holding Current:15mA
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:400V; On-State RMS Current, IT(rms):10A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:10A; Holding Current:35mA NVRAM中(EEPROM的基础
Cypress Semiconductor, Corp.
Z86C95-20AEC Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:5mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes 8位微控制
Microchip Technology, Inc.
PBA600F-15 PBA600F-24 PBA600F-36 PBA600F-12    40/40typ (Io=100%) (Primary inrush current /Secondary inrush current) (More than 3 sec. to re-start)
   AC3,000V 1minute, Cutoff current = 10mA, DC500V 50MWmin (At Room Temperature)
Total Power Internation...
BD437/D Triac; Triac Type:Alternistor; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Package/Case:3-TO-220; Current, It av:12A; Gate Trigger Current Max, Igt:50mA 塑料中功率硅NPN晶体
Crydom, Inc.
74AHCT259D 74AHC259D 74AHC259PW 74AHCT259PW HCT259 Zener Diode; Zener Voltage Typ, Vz:2.7V; Vz Test Current, Izt:20mA; Power Dissipation, Pd:500mW; Package/Case:DO-35; Breakdown Voltage Max:2.7V; Forward Current:200A; Leakage Current Max:100uA; Mounting Type:Through Hole 8位可寻址锁存
8-bit addressable latch
NXP Semiconductors N.V.
MP5018 5V, 1A-5A Current Limit Switch with Reverse Current Blocking and Output Over-voltage Clamp
Monolithic Power System...
 
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