PART |
Description |
Maker |
SD853C40S50K SD853C30S50K |
4000V Fast Recovery Diode in a DO-200AC (K-Puk) package 3000V Fast Recovery Diode in a DO-200AC (K-Puk) package
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International Rectifier
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SD4000C..RSERIES SD4000C38R SD4000C40R SD4000C30R |
3400V 4450A Std. Recovery Diode in a B-44 (R-Puk)package 3000V 4450A Std. Recovery Diode in a B-44 (R-Puk)package 4000V 4450A Std. Recovery Diode in a B-44 (R-Puk)package 3800V 4450A Std. Recovery Diode in a B-44 (R-Puk)package STANDARD RECOVERY DIODES
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International Rectifier
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STIP4006 STI2006 STIP3006 STI2506 STIP2506 STIP150 |
Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-220; Current, It av:6A; Holding Current:50mA Transient Surge Protection Thyristor; Package/Case:DO-214AA; Repetitive Reverse Voltage Max, Vrrm:320V; Capacitance:60pF; Holding Current:50mA; Leakage Current:5uA; Mounting Type:Through Hole; On-State Saturation Voltage:4V Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Package/Case:3-TO-202; Current, It av:6A; Holding Current:50mA TRANSISTOR | BJT | NPN | 250V V(BR)CEO | 1A I(C) | TO-66 Triac; Triac Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:200V; On-State RMS Current, IT(rms):4A; Gate Trigger Current (QI), Igt:10mA; Package/Case:V-PAK; Current, It av:4A; Holding Current:20mA TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 1A I(C) | TO-66
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|
MR830 MR836 MR832 MR834 |
(MR830 - MR836) 600V Vrrm Fast Recovery Rectifier
|
Motorola
|
NTE5558 NTE5550 NTE5552 NTE5554 |
Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 400V. Forward current 25A. Silicon Controlled Rectifiers Silicon controlled rectifier. Peak reverse blocking voltage Vrrm = 200V. Forward current 25A.
|
NTE[NTE Electronics]
|
BAX280 Q67000-S280 |
FRED Diode (VRRM 1000 V IFRMS 5.5 A 55 ns Soft recovery characteristics) From old datasheet system
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|
GC1500B GC1500B-2 |
Hyperabrupt - Abrupt, UHF Microwave Tuning Diodes 30V Vrrm, 800fF Capacitance Varactor Diode
|
MSI Electronics, Inc.
|
X40020V14I-C X40020V14I-B X40020V14I-A |
DIODE, STANDARD, 95A, 400V, STUD; Voltage, Vrrm:400V; Current, If av:95A; Case style:E12; Current, Ifs max:700A; Diode type:Standard recovery; Polarity, diode:Stud Anode; Thread size:M8; Voltage, forward at If:1.5V RoHS Compliant: Yes Standard Recovery Rectifier; Repetitive Reverse Voltage Max, Vrrm:1600V; Forward Current Avg Rectified, IF(AV):50A; Non Repetitive Forward Surge Current Max, Ifsm:700A; Forward Voltage Max, VF:1.6V; Package/Case:SO-32B DIODE, STUD 50A 1200VDIODE, STUD 50A 1200V; Voltage, Vrrm:1200V; Current, If av:50A; Current, Ifs max:700A; Voltage, forward at If:1.6V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Anode
|
Intersil Corporation
|
PC3ST21NSZ |
VDRM : 600V, Zero cross type DIP 4pin Phototriac Coupler for triggering
|
Sharp Electrionic Component...
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PC3ST11NSZ |
VDRM : 600V, Non-zero cross type DIP 4pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
PC3SD21NTZ04 PC3SD21NTZBF PC3SD21NXZCF |
VDRM : 600V Zero cross type DIP 6pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
|
MY31W MY31 MY31C MY31D MY31T |
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:5mA Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt YELLOW LED LAMPS
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MICRO-ELECTRONICS[Micro Electronics]
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