| PART |
Description |
Maker |
| STPSC6H12B-TR1 |
1200 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| SSR30C100S1 SSR30C120S1 |
30 A / 1200 V Schottky Silicon Carbide Rectifier
|
Solid States Devices, Inc
|
| APT26F120L APT26F120B2 APT26F120B209 |
Power FREDFET; Package: TO-264 [L]; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power FREDFET; Package: T-MAX™; ID (A): 27; RDS(on) (Ohms): 0.58; BVDSS (V): 1200; 27 A, 1200 V, 0.58 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel FREDFET
|
Microsemi, Corp.
Microsemi Corporation
|
| SDR4512M |
45 AMP 1200 VOLTS 80 nsec RECTIFIER 45 A, 1200 V, SILICON, RECTIFIER DIODE, TO-254AA
|
Solid State Devices, Inc.
|
| STTH1212G-TR STTH1212 STTH1212D STTH1212G |
12 A, 1200 V, SILICON, RECTIFIER DIODE, TO-220AC
Ultrafast recovery - 1200 V diode
|
STMicroelectronics
|
| DSSK30-01A IXYSCORP-DSSK30-01A |
Power Schottky Rectifier with common cathode 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS Corporation
|
| DSSK60-0045A |
Power Schottky Rectifier with common cathode 30 A, 45 V, SILICON, RECTIFIER DIODE, TO-247AD
Silicon Schottky Diodes
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| MTP3N120E_D ON2600 MTP3N120E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate
From old datasheet system
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
|
ON Semiconductor
|
| DSS10-006A IXYSCORP-DSS10-006A |
From old datasheet system
Power Schottky Rectifier
Silicon Schottky Diodes
|
IXYS[IXYS Corporation]
|
| DSSK30-0045A |
Silicon Schottky Diodes
Power Schottky Rectifier with common cathode
|
IXYS[IXYS Corporation]
|
| STPSC1206 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
