PART |
Description |
Maker |
2729-300P |
Pulsed Power S-Band (Si)
|
Microsemi
|
2729-170 |
Pulsed Power S-Band (Si)
|
Microsemi
|
1014-6A |
Pulsed Power L-Band (Si)
|
Microsemi
|
2731-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
3134-200P |
Pulsed Power S-Band (Si)
|
Microsemi
|
TCS450 |
450 Watts, 45 Volts, Pulsed Avionics 1030 MHz TCAS 1030 MHz, Class C, Common Base, Pulsed; P(out) (W): 450; P(in) (W): 100; Gain (dB): 6.5; Vcc (V): 45; Pulse Width (µsec): 32; Duty Cycle (%): 2; Case Style: 55KT-1 L BAND, Si, NPN, RF POWER TRANSISTOR
|
MICROSEMI POWER PRODUCTS GROUP GHz Technology Microsemi, Corp.
|
RFHA1023 |
225W GaN WIDE-BAND PULSED POWER AMPLIFIER
|
RF Micro Devices
|
MAPPST2933-190M |
S BAND, Si, NPN, RF POWER TRANSISTOR HERMETICALLY SEALED PACKAGE-4 Radar Pulsed Power Pallet 190W, 2.9-3.3 GHz
|
M/A-COM Technology Solutions, Inc.
|
HVV1012-060 |
L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10楼矛s Pulse, 1% Duty for DME and TCAS Apllications L-Band Avionics Pulsed Power Transistor 1025-1150MHz, 10μs Pulse, 1% Duty for DME and TCAS Apllications
|
HVVi Semiconductors, Inc.
|
1214-300M |
L-Band 1200-1400 MHz, Class C, Common Base-Pulsed; P(out) (W): 300; P(in) (W): 40; Gain (dB): 8.75; Vcc (V): 40; Pulse Width (µsec): 150; Duty Cycle (%): 10; Case Style: 55ST-1 L BAND, Si, NPN, RF POWER TRANSISTOR 300 Watts - 40 Volts, 150ms, 10% Radar 1200 - 1400 MHz
|
Microsemi, Corp. Advanced Power Technology Ltd. ADPOW[Advanced Power Technology]
|
VTU-5192F1 |
Unigrid Pulsed I-J Band Helix TWT Series
|
Communications & Power Industries, Inc.
|
|