| PART |
Description |
Maker |
| 1214-110M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300M |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 1214-300V |
Pulsed Power L-Band (Si)
|
Microsemi
|
| 3134-65M |
Pulsed Power S-Band (Si)
|
Microsemi
|
| HVV1011-035 |
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50楼矛s Pulse, 5% Duty for TCAS and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030-1090MHz, 50μs Pulse, 5% Duty for TCAS and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| HVV1011-300 HVV1011-300-EK |
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50μs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
L-Band Avionics Pulsed Power Transistor 1030/1090 MHz, 50レs Pulse, 5% Duty For TCAS, IFF and Mode-S Applications
|
HVVi Semiconductors, Inc.
|
| TCS1200 |
1200 Watts, 53 Volts Pulsed Avionics at 1030 MHz L BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| HVV1214-100 HVV1214-100-EK |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| HVV1214-025 |
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications
L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
|
HVVi Semiconductors, Inc.
|
| PH1214-20EL |
Radar Pulsed Power Transistor, 20W, 2ms Pulse, 10% Duty 1.2 - 1.4 GHz
Radar Pulsed Poewr Transistor20W 雷达脉冲Poewr晶体管，20
|
Tyco Electronics
Rhopoint Components, Ltd.
|
| PH2729-110M PH2729-11OM |
Radar Pulsed Power Transistor锛?110W
Radar Pulsed Power Transistor/ IlOW/ loops Pulse/ 10% Duty 2.7 - 2.9 GHz
Radar Pulsed Power Transistor, 110W, 100us Pulse, 10% Duty 2.7 - 2.9 GHz
|
Tyco Electronics
|
|
