| PART |
Description |
Maker |
| APTDF200H60G |
FRED 50-1700V
|
Microsemi
|
| APTDF30H601G |
FRED 50-1700V
|
Microsemi
|
| APT30DF20HJ |
FRED 50-1700V
|
Microsemi
|
| APT30DF100HJ |
FRED 50-1700V
|
Microsemi
|
| APT60DF20HJ |
FRED 50-1700V
|
Microsemi
|
| STC06IE170HV |
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17?/a>
Emitter switched bipolar transistor ESBT 1700V - 6A - 0.15 Ohm
Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17з
|
http://
ST Microelectronics, Inc.
STMicroelectronics
|
| STC04IE170HV |
Emitter switched bipolar transistor ESBT? 1700V - 4A - 0.17 W
Emitter switched bipolar transistor ESBT㈢ 1700V - 4A - 0.17 W
|
STMicroelectronics
|
| BYP103 C67047-A2066-A2 SIEMENSAG-C67047-A2066-A2 |
From old datasheet system
FRED DIODE (FAST RECOVERY EPITAXIAL DIODE SOFT RECOVERY CHARACTERISTICS)
FRED-FET Diode
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| 2MBI1000VXB-170E-50 |
IGBT MODULE (V series) 1700V / 1000A / 2 in one package
|
Fuji Electric
|
