| PART |
Description |
Maker |
| ESJA02-02S-17 |
20mA 2.0kV 100nS SUBMINIATURE HIGH VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC...
|
| ESJA02-04S-17 |
20mA 4.0kV 100nS SUBMINIATURE HIGH VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC...
|
| HV200F06-17 |
200mA 6.0kV 100nS-- High Voltage Diodes
|
GETAI ELECTRONICS DEVIC...
|
| SB002-15SPA SB002-15CPA |
150V/ 20mA Rectifier
Shottky barrier diode, 150V/20mA rectifier
150V, 20mA Rectifier
Small signal(single type)
|
Sanyo Electric Co.,Ltd.
Sanyo Semiconductor
SANYO[Sanyo Semicon Device]
|
| LT3080 LT3080-1 LT1764A LT3007 LT3008 LT3020 LT302 |
3μA IQ, 20mA, 45V Low Dropout Fault Tolerant Linear Regulators Output Current: 20mA
|
Linear Technology
|
| BR02-BR2 |
2.0kV 2.0A HIGH VOLTAGE DIODES
|
GETAI ELECTRONICS DEVIC...
|
| K4H560438D-NC/LA0 K4H560838D-NC/LA0 K4H560438D-NC/ |
256Mb sTSOPII 256Mb的sTSOPII
DIODE ZENER SINGLE 300mW 10Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-23 3K/REEL
DIODE ZENER SINGLE 200mW 9.1Vz 20mA-Izt 0.02592 0.1uA-Ir 7 SOD-323 3K/REEL
DIODE ZENER TRIPLE ISOLATED 200mW 9.95Vz 20mA-Izt 0.02513 0.1uA-Ir 8 SOT-363 3K/REEL
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| DAU-15PTI-FO DAUE-15PTI-FO DDU-50P DBUE-25S |
15 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, CRIMP, PLUG
D-Subminiature Connector; D Sub Shell Size:DB50; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No 50 CONTACT(S), MALE, D SUBMINIATURE CONNECTOR, CRIMP, PLUG
25 CONTACT(S), FEMALE, D SUBMINIATURE CONNECTOR, CRIMP, SOCKET
|
Cinch Connectors
|
| LT3009IDC-1.2-PBF LT3009IDC-1.2-TRPBF LT3009IDC-1. |
3楼矛A IQ, 20mA Low Dropout Linear Regulators
3渭A IQ, 20mA Low Dropout Linear Regulators
3μA IQ, 20mA Low Dropout Linear Regulators
|
Linear Technology
|
| E28 E116 E113 E30 E106 E103 E105 E112 E209 E3 E100 |
Yellow, mini LED. Lens translucent. Luminous intensity at 10mA: 2.0mcd(min), 3.5mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
Orange InGaAIP, T-1 3/4, ultra bright LED. Lens orange translucent. Luminous intensity at 20mA: 700mcd(min), 3000mcd(max). Forward voltage at 20mA: 1.8V(typ), 2.3V(max).
Super bright green, mini LED. Lens translucent. Luminous intensity at 10mA: 10.0mcd(min), 16.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Green T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.2V(typ), 2.5V(max).
Red T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 12.5mcd(typ), 32.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
T-1 bright white LED / Lens clear
Miniature LEDs 微型发光二极
Orange, mini LED. Lens translucent. Luminous intensity at 10mA: 3.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.6V(max).
Yellow T-1, right angle LED(3mm). Lens diffused. Luminous intensity at 10mA: 5.0mcd(typ), 20.0mcd(max). Forward voltage at 20mA: 2.1V(typ), 2.5V(max).
High efficiency red, mini LED. Lens translucent. Luminous intensity at 10mA: 4.0mcd(min), 7.0mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max)(max).
Ultra bright red, mini LED. Lens translucent. Luminous intensity at 10mA: 20.0mcd(min), 60.0mcd(max). Forward voltage at 20mA: 1.85V(typ), 2.5V(max)(max).
Yellow InGaAIP, T-1 3/4, ultra bright LED. Lens yellow translucent. Luminous intensity at 20mA: 400mcd(min), 1600mcd(max). Forward voltage at 20mA: 2.0V(typ), 2.5V(max).
|
Gilway Technical Lamp
International Light Technologies Inc.
International Light Technologies, Inc.
|
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
|
