| PART |
Description |
Maker |
| 2N7371E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N3765U4 2N3764U4 JANS2N3764U4 JANSD2N3764U4 JAN2N |
PNP Transistor
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 2N2905ALE3 JANSM2N2904AL |
PNP Transistor
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| S13003A |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| S13003AD |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| SD965 |
Bipolar Junction Transistor
|
Sinyork
|
| 6DI50B-050 6DI50B050 1DI200A140 2DI100A140 2DI30A1 |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 600V V(BR)CEO | 15A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 1.4KV V(BR)CEO | 100A I(C)
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 1.4KV V(BR)CEO | 200A I(C)
4-Wire Interfaced, 2.7V to 5.5V, 4-Digit 5 x 7 Matrix LED Display Driver
Bipolar Transistor Modules
|
Fuji Electric Co., Ltd.
|
| 2N1493 2N1410 2N335 2N337 2N333 2N2537 2N3510 2N36 |
5-Pin, Multiple-Input, Programmable Reset ICs
TRANSISTOR | BJT | NPN | 25MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 20MA I(C) | TO-5
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset
TRANSISTOR | BJT | NPN | 10V V(BR)CEO | 500MA I(C) | TO-52
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 500MA I(C) | TO-105
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 50MA I(C) | TO-72
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 500MA I(C) | TO-5
TRANSISTOR | BJT | PNP | 6V V(BR)CEO | 100MA I(C) | TO-92
TRANSISTOR | BJT | NPN | 7V V(BR)CEO | 100MA I(C) | TO-18
TRANSISTOR | BJT | NPN | 35V V(BR)CEO | 800MA I(C) | TO-5
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | NPN | 45V V(BR)CEO | 300MA I(C) | TO-5
|
Weidmuller, Corp.
|
| 2N1021A 2N457A 2N1166 2N1022A 2N1552 2N1554 |
germanium power transistors
Bipolar Junction Transistor
SILICON PNP TRANSISTOR
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| ZXTC6718MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
| ZXTC6717MC |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes
|
