| PART |
Description |
Maker |
| RJK5002DJE RJK5002DJE-00Z0 RJK5002DJE-15 |
500V - 2.4A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| FAP-450 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 14A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 500V五（巴西）直|4A条（丁）|47VAR
N-channel MOS-FET(500V, 0,38Ω, 14A, 190W)
N-channel MOS-FET(500V, 0,38楼?, 14A, 190W)
|
TOKO, Inc.
Fuji Electric
|
| 2SK2090 D11228EJ1V0DS00 |
N-Channel MOS FET FOR HIGH-SPEED SWITCHING
From old datasheet system
MOS Field Effect Transistor
|
NEC[NEC]
|
| RJK0391DPA RJK0391DPA-00-J5A RJK0391DPA-13 RJK0391 |
N Channel Power MOS FET High Speed Power Switching
30V, 50A, 2.9m?max. N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| 2SJ483 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ517 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SJ518 |
Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| FX6ASJ-03-T13 FX6ASJ-03 |
Transistors>Switching/MOSFETs
High-Speed Switching Use Pch Power MOS FET 高速开关使用沟道功率MOS FET
|
RENESAS[Renesas Electronics Corporation]
Renesas Electronics Corporation.
|
| 2SK2545 |
FET Silicon N Channel Mos Type(for High speed, High Voltage Switching)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1960 |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC
|
| 2SK1272 2SK1272-T 2SK1272-T/JD 2SK1272-T/JM |
N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
