PART |
Description |
Maker |
SA08A4C |
Sillicon Controlled Rectifiers Thyristors 0.8A Mold SCR
|
Korea Electronics (KEC)
|
NTE5566 NTE5564 NTE5562 NTE5563 |
Silicon Controlled Rectifiers (SCRs) Silicon Controlled Rectifiers (SCR’s)
|
NTE[NTE Electronics]
|
1SS345 |
Sillicon Epitaxial Schottky Barrier Diode
|
Guangdong Kexin Industrial Co.,Ltd
|
MCR12DSMT4 MCR12DSNT4G MCR12DSM MCR12DSMT4G MCR12D |
Sensitive Gate Silicon Controlled Rectifiers(???纭??娴??) Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
MCR718 MCR718T4 MCR716T4 MCR716 |
Silicon Controlled Rectifier (Reverse Blocking Thyristors) Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 − 600 VOLTS) Sensitive Gate Silicon Controlled Rectifiers(SCRs 4.0 AMPERES RMS 400 - 600 VOLTS)
|
ONSEMI[ON Semiconductor]
|
MCR106 MCR106-2 MCR106-3 MCR106-4 MCR106-6 MCR106- |
Silicon Controlled Rectifiers 4 A, 200 V, SCR, TO-225AA Silicon Controlled Rectifiers 4 A, 100 V, SCR, TO-225AA
|
MOTOROLA INC MOTOROLA[Motorola, Inc] Unisonic Technologies Co., Ltd. Motorola Mobility Holdings, Inc.
|
2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase) Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation Microsemi, Corp.
|
BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage Silicon Controlled Rectifiers
|
SemiWell Semiconductor
|
2N1794 2N179407 2N1795 2N1796 2N1797 2N1798 2N1800 |
Silicon Controlled Rectifiers
|
Microsemi Corporation
|
C122M C122 C122A C122B C122C C122D C122E C122F |
8-A Silicon Controlled Rectifiers
|
SSDI[Solid States Devices, Inc]
|