PART |
Description |
Maker |
EDI8L24129V-BC EDI8L24129V12BI EDI8L24129V EDI8L24 |
10ns; 3.3V power supply; 128K x 24 SRAM SRAM MCP SDR Connector; No. of Contacts:26; Pitch Spacing:0.8mm; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 128K X 24 SRAM 3.3 VOLT 128K的X 24 SRAM.3 15ns; 3.3V power supply; 128K x 24 SRAM
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Electronic Theatre Controls, Inc. White Electronic Designs
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EDI88130LPSNI EDI88130CS EDI88130CSLM EDI88130CSL3 |
25ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 45ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 17ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 128Kx8 Monolithic SRAM, SMD 5962-89598 128Kx8单片的SRAM,贴962-89598 128Kx8 Monolithic SRAM/ SMD 5962-89598 15ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 20ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 35ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598 55ns; 5V power supply; 128K x 8 monolithic SRAM, SMD 5962-89598
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White Electronic Designs ETC Electronic Theatre Controls, Inc.
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5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
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Atmel
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GS71108TP-10 GS71108TP-12 GS71108TP-12I GS71108TP |
15ns 128K x 8 1Mb asynchronous SRAM 12ns 128K x 8 1Mb asynchronous SRAM 10ns 128K x 8 1Mb asynchronous SRAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 0.400 INCH, SOJ-32 128K X 8 STANDARD SRAM, 12 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 12 ns, PDSO32 0.300 INCH, SOJ-32 128K X 8 STANDARD SRAM, 15 ns, PBGA48 6 X 8 MM, 0.75 MM PITCH, FBGA-48 128K X 8 STANDARD SRAM, 15 ns, PDSO32
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GSI[GSI Technology] GSI Technology, Inc.
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WMS128K8-17FEM WMS128K8-17FM WMS128K8-55CLC WMS128 |
55ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 17ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 15ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 x8 SRAM x8的SRAM 25ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691 20ns; low power for 2V data retention; 128K x 8 monilithic SRAM, SMD 5962-96691
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White Electronic Designs Microchip Technology, Inc. Sharp, Corp. Electronic Theatre Controls, Inc. Raltron Electronics, Corp.
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IS61LV12824-8TQ IS61LV12824 IS61LV12824-10B IS61LV |
128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K的24 HIGH-SPEED的CMOS静态RAM.3V电源 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PQFP100 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 8 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PBGA119 128K x 24 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 24 STANDARD SRAM, 10 ns, PQFP100
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天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution, Inc] Integrated Silicon Solution Inc
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IS61LV12816LL-12T IS61LV12816LL-12BI IS61LV12816LL |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44
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Integrated Silicon Solution, Inc.
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IS61LV12816 IS61LV12816-10B IS61LV12816-10BI IS61L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PBGA48 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PBGA48 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PDSO44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 15 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 10 ns, PQFP44 128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY 128K X 16 STANDARD SRAM, 12 ns, PQFP44
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Integrated Silicon Solution, Inc. ISSI[Integrated Silicon Solution Inc] Integrated Circuit Solution Inc ISSI[Integrated Silicon Solution, Inc]
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EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module 20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module 25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
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White Electronic Designs
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28C010TRTDI-15 28C010TRPFB-15 28C010TRT2DI-12 28C0 |
1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 200 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DIP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 150 ns, DFP32 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 5V, 120 ns, DFP32 POT 200K OHM THUMBWHEEL CERM ST 128K X 8 EEPROM 5V, 200 ns, DFP32 150 x 32 pixel format, LED Backlight available 128K X 8 EEPROM 5V, 120 ns, DIP32 Low Profile Power Inductor; Inductor Type:Power; Inductance:1uH; Inductance Tolerance: /- 20 %; Series:HC2LP; Core Material:Ferrite; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes RoHS Compliant: Yes CONNECTOR ACCESSORY Film Capacitor; Voltage Rating:400VDC; Capacitor Dielectric Material:Polyester; Capacitance:0.068uF; Capacitance Tolerance: /- 10%; Lead Pitch:15mm; Leaded Process Compatible:No; Package/Case:F; Peak Reflow Compatible (260 C):No RoHS Compliant: No
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http:// Maxwell Technologies, Inc
|
KM68FS1000 KM68FR1000 |
128K x8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(128K x 8位超低功耗和低电压CMOS 静RAM) 128K的x8位超低功耗和低电压的CMOS全静态RAM28K的8位超低功耗和低电压的CMOS静态RAM)的
|
SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
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IS61LV1281 IS61LV12816L IS61LV12816L-10T IS61LV128 |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
|
天津新技术产业园区管理委员会 Integrated Silicon Solution, Inc ISSI
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