| PART |
Description |
Maker |
| IPD80R900P7 |
800V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPA80R600P7 |
800V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPD80R2K0P7 |
800V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPA80R1K4P7 |
800V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| IPN80R1K4P7 |
800V CoolMOSa P7 Power Transistor
|
Infineon Technologies A...
|
| 2SC3153 2SC3153M |
TRANSISTOR | BJT | NPN | 800V V(BR)CEO | 6A I(C) | TO-247VAR 晶体管|晶体管|叩| 800V的五（巴西）总裁| 6A条一（c）|47VAR
POWER TRANSISTORS(6A/800V/100W)
POWER TRANSISTORS(6A,800V,100W)
POWER TRANSISTORS(6A800V100W)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| IRFIBE20G |
800V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.4A)
GT 19C 19#12 SKT RECP BOX
|
IRF[International Rectifier]
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
| SPA11N80C3 SPP11N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
|
Infineon Technologies AG
|
| SPP06N80C3 SPA06N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS Power Transistor
Cool MOS⑩ Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| IPN50R3K0CE |
500V CoolMOSa CE Power Transistor
|
Infineon Technologies A...
|
| IPSA70R600CE |
700V CoolMOSa CE Power Transistor
|
Infineon Technologies A...
|
