PART |
Description |
Maker |
CY7C161KV18 |
144-Mbit DDR II SRAM Two-Word Burst Architecture
|
Cypress Semiconductor
|
R1QDA4418RBG-18IA0 R1QDA4436RBG-20IB0 |
144-Mbit QDR?II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT 144-Mbit QDR?II SRAM 4-word Burst Architecture (2.5 Cycle Read latency) with ODT
|
Renesas Electronics Corporation
|
M48Z2M1Y10 M48Z2M1V-85PL1 M48Z2M1Y-85PL1 M48Z2M1Y- |
5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER庐 SRAM 5 V or 3.3 V, 16 Mbit (2 Mb x 8) ZEROPOWER? SRAM 2M X 8 NON-VOLATILE SRAM MODULE, 70 ns, PDIP36
|
STMicroelectronics
|
SST31LF021-300-4E-WH SST31LF021E-300-4E-WH SST31LF |
2 Mbit Flash 1 Mbit SRAM ComboMemory SPECIALTY MEMORY CIRCUIT, PDSO32 2 Mbit Flash 1 Mbit SRAM ComboMemory 2 Mbit闪存1兆位的SRAM ComboMemory
|
Silicon Storage Technology, Inc.
|
M3H71FAD-R M3H15TDD M3H52TCD-R MH75FBD MH75FAG MH7 |
8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator 16-bit, 75 MIPS, 2.5v, 2 serial ports, host port, 80 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 20KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Ind 16-Bit, 80MIPS, 1.8V, 2 Serial Ports, Host Port, 80KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 16-Bit, 75 MIPS, 2.5V, 2 Serial Ports, Host Port, 40 KB RAM; Package: 144 ball CSPBGA (10x10x1.4mm); No of Pins: 144; Temperature Range: Comm. 500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: 576 ball SBGA; No of Pins: 576; Temperature Range: Ind 300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 625 ball BGA; No of Pins: 625; Temperature Range: Ind 500 MHz TigerSHARC Processor with 12 Mbit on-chip embedded DRAM; Package: BGA THERM ENH W/ HEATSINK; No of Pins: 576; Temperature Range: Ind 300 MHz TigerSHARC Processor with 6 Mbit on-chip SRAM; Package: 484 ball BGA; No of Pins: 484; Temperature Range: Ind 8 pin DIP, 3.3 or 5.0 Volt, HCMOS/TTL Clock Oscillator
|
MTRONPTI
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
CY7C1472BV25-167BZXC CY7C1472BV25-167BZXI CY7C1472 |
2M X 36 ZBT SRAM, 3 ns, PBGA165 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL垄芒 Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL?/a> Architecture
|
CYPRESS SEMICONDUCTOR CORP
|
HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 2-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP- |
Memory>Fast SRAM>QDR SRAM 36-Mbit QDRTMII SRAM 4-word Burst
|
Renesas Technology / Hitachi Semiconductor
|
CY7C1481V33-133BZXI CY7C1481V33-133AXI CY7C1481V33 |
72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 1M X 72 CACHE SRAM, 6.5 ns, PBGA209 72-Mbit (2M x 36/4M x 18/1M x 72) Flow-Through SRAM 4M X 18 CACHE SRAM, 6.5 ns, PBGA165
|
Cypress Semiconductor Corp. Cypress Semiconductor, Corp.
|