| PART |
Description |
Maker |
| 0-519024-2 0-519151-9 0-539787-6 1-519151-3 |
ERGOCRIMP Die Set for Type XII and Type III
|
Tyco Electronics
|
| BTS723GW Q67060-S7501 |
Smart High-Side Power Switch Two Channels: 2 x 100m?/a> Status Feedback Suitable for 42V
Smart High-Side Power Switch Two Channels: 2 x 100mз Status Feedback Suitable for 42V 智能高侧电源开关两个渠道：2 ×100mз状态反馈适用2V
High Speed CMOS Logic Decade Counter/Divider with 10 Decoded Outputs 16-TSSOP -55 to 125
Smart High-Side Power Switch Two Channels: 2 x 100m Status Feedback Suitable for 42V
Smart High Side Switches - 5,0-62V, 2x100mLimit(scr) 8A DSO-14-9
|
INFINEON[Infineon Technologies AG]
|
| K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片（了x4，x8
Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125
256Mb E-die DDR SDRAM Specification 66 TSOP-II
Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC
10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP
DDR SDRAM 256Mb E-die (x4, x8)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| NA-820 |
Suitable for VPN
|
Axiomtek Co., Ltd.
|
| SIDC01D60SIC2SAWN SIDC01D60SIC2UNSAWN |
Diodes - HV Chips - 600V, 4A die sawn
Diodes - HV Chips - 600V, 4A die unsawn
|
Infineon
|
| STP60NE03L-10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STD3N30L-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP19N06 STP19N06FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP5N30 STP5N30FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STD3N30-1 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP40NE03L-20 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
| STP9NA50 STP9NA50FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
|
ST Microelectronics
|
